High-pressure-assisted synthesis of high-volume ZnGeP2 polycrystalline
文献类型:期刊论文
作者 | Huang, Changbao; Wu, Haixin; Xiao, Ruichun; Chen, Shijing; Ma, Jiaren |
刊名 | JOURNAL OF CRYSTAL GROWTH |
出版日期 | 2018-06-15 |
卷号 | 492期号:无页码:24-28 |
ISSN号 | 0022-0248 |
关键词 | Pnictide semiconductor Polycrystalline synthesis High-pressure-resisted method Stoichiometric |
DOI | 10.1016/j.jcrysgro.2018.01.027 |
英文摘要 | The pnictide and chalcogenide semiconductors are promising materials for the applications in the field of photoelectric. High-purity and high-volume polycrystalline required in the real-world applications is hard to be synthesized due to the high vapor pressure of phosphorus and sulfur components at high temperature. A new high-pressure-resisted method was used to investigate the synthesis of the nonlinearoptical semiconductor ZnGeP2. The high-purity ZnGeP2 polycrystalline material of approximately 500 g was synthesized in one run, which enables the preparation of nominally stoichiometric material. Since increasing internal pressure resistance of quartz crucible and reducing the reaction space, the highpressure-resisted method can be used to rapidly synthesize other pmctide and chalcogemde semiconductors and control the components ratio. (C) 2018 Published by Elsevier B.V. |
WOS关键词 | OPTICAL PARAMETRIC OSCILLATOR ; 2-TEMPERATURE SYNTHESIS ; SINGLE-CRYSTALS ; GROWTH ; ZINC ; CHALCOGENIDE ; IMPROVEMENT ; CLUSTERS ; BRIDGMAN ; DEFECTS |
资助项目 | National Natural Science Foundation of China (NSFC)[51702323] |
WOS研究方向 | Crystallography ; Materials Science ; Physics |
语种 | 英语 |
出版者 | ELSEVIER SCIENCE BV |
WOS记录号 | WOS:000432747200005 |
源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/36973] |
专题 | 合肥物质科学研究院_中科院安徽光学精密机械研究所 |
通讯作者 | Wu, Haixin |
作者单位 | Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Anhui Prov Key Lab Photon Devices & Mat, Hefei 230031, Anhui, Peoples R China |
推荐引用方式 GB/T 7714 | Huang, Changbao,Wu, Haixin,Xiao, Ruichun,et al. High-pressure-assisted synthesis of high-volume ZnGeP2 polycrystalline[J]. JOURNAL OF CRYSTAL GROWTH,2018,492(无):24-28. |
APA | Huang, Changbao,Wu, Haixin,Xiao, Ruichun,Chen, Shijing,&Ma, Jiaren.(2018).High-pressure-assisted synthesis of high-volume ZnGeP2 polycrystalline.JOURNAL OF CRYSTAL GROWTH,492(无),24-28. |
MLA | Huang, Changbao,et al."High-pressure-assisted synthesis of high-volume ZnGeP2 polycrystalline".JOURNAL OF CRYSTAL GROWTH 492.无(2018):24-28. |
入库方式: OAI收割
来源:合肥物质科学研究院
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。