All-Optical-Input Transistors: Light-Controlled Enhancement of Plasmon-Induced Photocurrent
文献类型：期刊论文
| 作者 | Gao, Xu Dong1,2; Fei, Guang Tao1,2 ; Zhang, Yao3,4,5; Zhang, Li De1,2; Hu, Ze Min1,2
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| 刊名 | ADVANCED FUNCTIONAL MATERIALS
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| 出版日期 | 2018-10-04 |
| 卷号 | 28期号:40页码:8 |
| 关键词 | Ag/TiO2 oxygen adsorption photocurrents plasmon-induced currents transistors |
| ISSN号 | 1616-301X |
| DOI | 10.1002/adfm.201802288 |
| 英文摘要 | Although phototransistors for controlling photocurrent with electricity have been studied intensively for several decades, transistors with all-optical inputs that can control the photocurrent with light have not been investigated thus far. In this paper, a plasmonic porous Ag/TiO2 transistor is fabricated with all-optical inputs. One light input acts as the source to generate a plasmonic-hot-electron photocurrent, while the other gate light changes the current channel by adjusting the height of an Ag/TiO2 Schottky barrier. As a result, the plasmon-induced photocurrent generated by the source light can be enhanced by several to one hundred times by controlling the gate light. In addition to signal enhancement, the device can also be used for signal modulation and switching. |
| WOS关键词 | PHOTODETECTORS ; PHOTORESPONSE ; NANOPARTICLES ; NANORODS |
| 资助项目 | CAS/SAFEA International Partnership Program for Creative Research Teams ; National Basic Research Program of China (973 Program)[2012CB932303] ; National Natural Science Foundation of China[51701207] ; National Natural Science Foundation of China[51471162] ; National Natural Science Foundation of China[51502294] ; National Natural Science Foundation of China[51671183] ; Foundation of Director of Institute of Solid State Physics, Chinese Academy of Sciences[2016DFY20] |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000446155700008 |
| 出版者 | WILEY-V C H VERLAG GMBH |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/39280]  |
| 专题 | 合肥物质科学研究院_中科院固体物理研究所 |
| 通讯作者 | Fei, Guang Tao; Zhang, Yao |
| 作者单位 | 1.Chinese Acad Sci, Hefei Inst Phys Sci, Inst Solid State Phys, Key Lab Mat Phys, POB 1129, Hefei 230031, Anhui, Peoples R China 2.Chinese Acad Sci, Hefei Inst Phys Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanotechnol, POB 1129, Hefei 230031, Anhui, Peoples R China 3.Univ Basque Country, CSIC, Mat Phys Ctr, ES-20018 Donostia San Sebastian, Spain 4.DIPC, ES-20018 Donostia San Sebastian, Spain 5.Univ Sci & Technol China, Microscale & Synerget Innovat Ctr Quantum Informa, Hefei Natl Lab Phys Sci, Hefei 230026, Anhui, Peoples R China |
| 推荐引用方式 GB/T 7714 | Gao, Xu Dong,Fei, Guang Tao,Zhang, Yao,et al. All-Optical-Input Transistors: Light-Controlled Enhancement of Plasmon-Induced Photocurrent[J]. ADVANCED FUNCTIONAL MATERIALS,2018,28(40):8. |
| APA | Gao, Xu Dong,Fei, Guang Tao,Zhang, Yao,Zhang, Li De,&Hu, Ze Min.(2018).All-Optical-Input Transistors: Light-Controlled Enhancement of Plasmon-Induced Photocurrent.ADVANCED FUNCTIONAL MATERIALS,28(40),8. |
| MLA | Gao, Xu Dong,et al."All-Optical-Input Transistors: Light-Controlled Enhancement of Plasmon-Induced Photocurrent".ADVANCED FUNCTIONAL MATERIALS 28.40(2018):8. |
入库方式： OAI收割
来源：合肥物质科学研究院
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