Effect of annealing on the electrophysical properties of CdTe/HgCdTe passivation interface by the capacitance-voltage characteristics of the metal-insulator-semiconductor structures
文献类型:期刊论文
作者 | Wang, Xi4; He, Kai3; Chen, Xing4; Li, Yang2; Lin, Chun4; Zhang, Qinyao4; Ye, Zhenhua4; Xin, Liwei3; Gao, Guilong3; Yan, Xin3 |
刊名 | AIP ADVANCES |
出版日期 | 2020-10-01 |
卷号 | 10期号:10 |
ISSN号 | 2158-3226 |
DOI | 10.1063/5.0021073 |
产权排序 | 2 |
英文摘要 | The capacitance-voltage characteristics of metal-insulator-semiconductor structures based on Hg1-xCdxTe (x = 0.218) with CdTe passivation are studied before and after the passivation annealing process. We found that after vacuum annealing at 300 degrees C for 24 h, the micromorphology of the passivation layer was significantly improved, and as the fixed charge density decreased from 1.3 x 10(12) cm(-2) to 1.0 x 10(10) cm(-2), the fast surface state density decreased from 2 x 10(13) cm(-2) eV(-1) to 3 x 10(12) cm(-2 )eV(-1), with a minimum value of 1.2 x 10(11) cm(-2) eV(-1). From these findings, combined with the secondary ion mass spectroscopy analysis, we conclude that the annealing process propagates an equivalent electrical surface for CdTe/HgCdTe uniformly from the principal physical interface to the inside of the bulk material, effectively improving the characteristics of the CdTe passivation layer. (C) 2020 Author(s). |
语种 | 英语 |
出版者 | AMER INST PHYSICS |
WOS记录号 | WOS:000576989900002 |
源URL | [http://ir.opt.ac.cn/handle/181661/93752] |
专题 | 条纹相机工程中心 |
通讯作者 | He, Kai |
作者单位 | 1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 2.Univ Tokyo, Inst Ind Sci, Meguro Ku, 4-6-1 Komaba, Tokyo 1538505, Japan 3.Chinese Acad Sci, Xian Inst Opt & Precis Mech XIOPM, Key Lab Ultrafast Photoelect Diagnost Technol, Xian 710119, Shaanxi, Peoples R China 4.Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detectors, Shanghai 200083, Peoples R China |
推荐引用方式 GB/T 7714 | Wang, Xi,He, Kai,Chen, Xing,et al. Effect of annealing on the electrophysical properties of CdTe/HgCdTe passivation interface by the capacitance-voltage characteristics of the metal-insulator-semiconductor structures[J]. AIP ADVANCES,2020,10(10). |
APA | Wang, Xi.,He, Kai.,Chen, Xing.,Li, Yang.,Lin, Chun.,...&Tian, Jinshou.(2020).Effect of annealing on the electrophysical properties of CdTe/HgCdTe passivation interface by the capacitance-voltage characteristics of the metal-insulator-semiconductor structures.AIP ADVANCES,10(10). |
MLA | Wang, Xi,et al."Effect of annealing on the electrophysical properties of CdTe/HgCdTe passivation interface by the capacitance-voltage characteristics of the metal-insulator-semiconductor structures".AIP ADVANCES 10.10(2020). |
入库方式: OAI收割
来源:西安光学精密机械研究所
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