A nondestructive raman spectra stress 2D analysis for the pressure sensor sensitive silicon membrane
文献类型：期刊论文
| 作者 | Wang, Zhenyu2; Si, Bingjian2; Chen, Su2; Jiao, Binbin1; Yan, Xiulan3
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| 刊名 | ENGINEERING FAILURE ANALYSIS
 |
| 出版日期 | 2019-11-01 |
| 卷号 | 105页码:1252-1261 |
| 关键词 | MEMS Residual stress Raman spectra Image mosaic |
| ISSN号 | 1350-6307 |
| DOI | 10.1016/j.engfailanal.2019.06.089 |
| 通讯作者 | Jiao, Binbin(jiaobinb@ime.ac.cn) ; Yan, Xiulan(yanxl@igsnrr.ac.cn) |
| 英文摘要 | The residual stresses introduced by the bonding process has become a key effect for the MEMS product yield improvements. Many in-situ stress measurements have to destruct the devices. Raman spectroscopy is a nondestructive inelastic scattering measuring. Interpreting the silicon Raman frequency shifting can describe the stress location and intensity quantitatively in the lattice. The confocal microscopic observation can realize micrometer scale resolution. However, the limited visual field cannot provide the device stress distribution overview. In the meantime, the microscope loading platform displacement (only 100 mu m) will introduce severe random errors (4 +/- 1 mu m) in the overlapping movements. Since the local stress intensity could be converted into a RGB gray pixel. Through the image mosaic algorithms, the measured local residual stress distribution maps (750 mu m x 160 mu m) could be stitched to an enlarged stress distribution map (750 mu m x 340 mu m). This methodology could not only expand the stress inspection overview (60 +/- 2%), but also examine and eliminate the displacement random errors. The analysis results showed that the residual stresses were about 70 +/- 5% of the simulation value. The uniform difference between the measured and simulated values indicated a trustable stress analysis. |
| WOS关键词 | TENSORIAL ANALYSIS ; SPECTROSCOPY |
| 资助项目 | Chinese Equipment Pre-research Field Foundation Key Project[61409230703] ; Chinese National Nature Science Foundation[41571309] |
| WOS研究方向 | Engineering ; Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:000496188200094 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| 资助机构 | Chinese Equipment Pre-research Field Foundation Key Project ; Chinese National Nature Science Foundation |
| 源URL | [http://ir.igsnrr.ac.cn/handle/311030/131955]  |
| 专题 | 中国科学院地理科学与资源研究所 |
| 通讯作者 | Jiao, Binbin; Yan, Xiulan |
| 作者单位 | 1.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China 2.Peking Univ, Sch Software & Microelect, Beijing 102600, Peoples R China 3.Chinese Acad Sci, Inst Geog Sci & Nat Resources Res, Key Lab Land Surface Pattern & Simulat, Beijing 100029, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Zhenyu,Si, Bingjian,Chen, Su,et al. A nondestructive raman spectra stress 2D analysis for the pressure sensor sensitive silicon membrane[J]. ENGINEERING FAILURE ANALYSIS,2019,105:1252-1261. |
| APA | Wang, Zhenyu,Si, Bingjian,Chen, Su,Jiao, Binbin,&Yan, Xiulan.(2019).A nondestructive raman spectra stress 2D analysis for the pressure sensor sensitive silicon membrane.ENGINEERING FAILURE ANALYSIS,105,1252-1261. |
| MLA | Wang, Zhenyu,et al."A nondestructive raman spectra stress 2D analysis for the pressure sensor sensitive silicon membrane".ENGINEERING FAILURE ANALYSIS 105(2019):1252-1261. |
入库方式： OAI收割
来源：地理科学与资源研究所
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