The Impact of Ferroelectric FETs on Digital and Analog Circuits and Architectures
文献类型：期刊论文
| 作者 | Chen, Xiaoming1; Sun, Xiaoyu2; Wang, Panni3; Datta, Suman4; Hu, Xiaobo Sharon4; Yin, Xunzhao4; Jerry, Matthew5; Yu, Shimeng3; Laguna, Ann Franchesca6; Ni, Kai4 |
| 刊名 | IEEE DESIGN & TEST
 |
| 出版日期 | 2020-02-01 |
| 卷号 | 37期号:1页码:79-99 |
| 关键词 | Iron Transistors Computer architecture Switches Capacitance Logic gates Computational modeling Ferroelectric Field Effect Transistor FeFET Negative Capacitance Field Effect Transistor NCFET Preisach model FPGAs content addressable memories CAM TCAM compute-in-memory analog synapse |
| ISSN号 | 2168-2356 |
| DOI | 10.1109/MDAT.2019.2944094 |
| 英文摘要 | Editor's note: Semiconductor industry is steadily on the quest for emerging devices and device technologies that lead to higher performance and higher efficiency of computing over CMOS technology. This tutorial introduces the potential of emerging devices that integrate ferroelectric material into digital as well as analog circuits. With a focus on FeFET technology, the authors first present device characteristics, and advantages in comparison to CMOS but also other emerging technologies such as RRAM. The article comprehensively demonstrates the use of FeFET technology in circuits, architectures, and applications.- Jurgen Teich, FAU Erlangen |
| 资助项目 | ASCENT - DARPA ; Innovative Project of the Institute of Computing Technology, Chinese Academy of Sciences (CAS)[5120186140] ; National Natural Science Foundation of China (NSFC)[61804155] ; Youth Innovation Promotion Association CAS ; Young Elite Scientists Sponsorship Program by CAST[2018QNRC001] |
| WOS研究方向 | Computer Science ; Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000515556300009 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| 源URL | [http://119.78.100.204/handle/2XEOYT63/14606]  |
| 专题 | 中国科学院计算技术研究所期刊论文_英文 |
| 通讯作者 | Niemier, Michael T. |
| 作者单位 | 1.Chinese Acad Sci, Inst Comp Technol, Beijing, Peoples R China 2.Georgia Inst Technol, Elect Engn, Atlanta, GA 30332 USA 3.Georgia Inst Technol, Elect & Comp Engn, Atlanta, GA 30332 USA 4.Univ Notre Dame, Notre Dame, IN 46556 USA 5.Micron, Boise, ID USA 6.Univ Notre Dame, Dept Comp Sci & Engn, Notre Dame, IN 46556 USA |
| 推荐引用方式 GB/T 7714 | Chen, Xiaoming,Sun, Xiaoyu,Wang, Panni,et al. The Impact of Ferroelectric FETs on Digital and Analog Circuits and Architectures[J]. IEEE DESIGN & TEST,2020,37(1):79-99. |
| APA | Chen, Xiaoming.,Sun, Xiaoyu.,Wang, Panni.,Datta, Suman.,Hu, Xiaobo Sharon.,...&Reis, Dayane.(2020).The Impact of Ferroelectric FETs on Digital and Analog Circuits and Architectures.IEEE DESIGN & TEST,37(1),79-99. |
| MLA | Chen, Xiaoming,et al."The Impact of Ferroelectric FETs on Digital and Analog Circuits and Architectures".IEEE DESIGN & TEST 37.1(2020):79-99. |
入库方式： OAI收割
来源：计算技术研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。