Write Back Energy Optimization for STT-MRAM-based Last-level Cache with Data Pattern Characterization
文献类型:期刊论文
| 作者 | Ni, Jiacheng1; Liu, Keren1; Wu, Bi1; Zhao, Weisheng1; Cheng, Yuanqing1; Zhang, Xiaolong2; Wang, Ying3 |
| 刊名 | ACM JOURNAL ON EMERGING TECHNOLOGIES IN COMPUTING SYSTEMS
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| 出版日期 | 2020-07-01 |
| 卷号 | 16期号:3页码:18 |
| 关键词 | STT-MRAM write energy reductions data patterns cache hierarchy |
| ISSN号 | 1550-4832 |
| DOI | 10.1145/3381860 |
| 英文摘要 | Traditional memory technologies face severe challenges in meeting the ever-increasing power and memory bandwidth requirements for high-performance computing and big-data analyses. Several emerging memory technologies are promising as the replacements of SRAM or DRAM. Among them, STT-MRAM can be used to replace SRAM as the last-level cache (LLC). However, it suffers from high write energy and latency. In this article, we investigate data patterns written from SRAM-based upper-level cache to STT-MRAM-based LLC to explore the write energy reduction potential. Depending on the data layoutwithin a cache line, redundant bits can be identified and eliminated from write back operations to save STT-MRAM write energy. We also propose a dynamic profiling method to accommodate different application characteristics. The extensive simulation results show that write energy can be saved by 37.05% similar to 38.89% for static profiling and 19.76% similar to 34.29% for dynamic profiling. |
| 资助项目 | Beijing Natural Science Foundation[4192035] ; Science, Technology and Innovation Commission of Shenzhen Municipality[JCYJ20180307123657364] |
| WOS研究方向 | Computer Science ; Engineering ; Science & Technology - Other Topics |
| 语种 | 英语 |
| WOS记录号 | WOS:000582598100006 |
| 出版者 | ASSOC COMPUTING MACHINERY |
| 源URL | [http://119.78.100.204/handle/2XEOYT63/15492] ![]() |
| 专题 | 中国科学院计算技术研究所期刊论文_英文 |
| 通讯作者 | Cheng, Yuanqing |
| 作者单位 | 1.Beihang Univ, 37 Xueyuan Rd, Beijing 100191, Peoples R China 2.Beijing ByteDance Technol Co Ltd, 48 Zhichun Rd, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Inst Comp Technol, 6 Kexueyuan South Rd, Beijing 100190, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ni, Jiacheng,Liu, Keren,Wu, Bi,et al. Write Back Energy Optimization for STT-MRAM-based Last-level Cache with Data Pattern Characterization[J]. ACM JOURNAL ON EMERGING TECHNOLOGIES IN COMPUTING SYSTEMS,2020,16(3):18. |
| APA | Ni, Jiacheng.,Liu, Keren.,Wu, Bi.,Zhao, Weisheng.,Cheng, Yuanqing.,...&Wang, Ying.(2020).Write Back Energy Optimization for STT-MRAM-based Last-level Cache with Data Pattern Characterization.ACM JOURNAL ON EMERGING TECHNOLOGIES IN COMPUTING SYSTEMS,16(3),18. |
| MLA | Ni, Jiacheng,et al."Write Back Energy Optimization for STT-MRAM-based Last-level Cache with Data Pattern Characterization".ACM JOURNAL ON EMERGING TECHNOLOGIES IN COMPUTING SYSTEMS 16.3(2020):18. |
入库方式: OAI收割
来源:计算技术研究所
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