High pressure synthesis of antiferromagnetic semiconductor of ZnMnO3
文献类型：期刊论文
| 作者 | Ni, Meiyan2; Zhang, Shoubao2; Han, Shuo2; Liu, Xiaoli2; Zhu, Xuebin1 ; Lu, Hongyan2; Zhou, Shaoshuai2; Zhao, Hongyan2
|
| 刊名 | PHYSICS LETTERS A
 |
| 出版日期 | 2020-12-30 |
| 卷号 | 384 |
| 关键词 | High pressure synthesis Manganese-base ilmenite Antiferromagnetic transition First principles calculation Semiconductor |
| ISSN号 | 0375-9601 |
| DOI | 10.1016/j.physleta.2020.126943 |
| 通讯作者 | Zhang, Shoubao(zhang.shoubao@qfnu.edu.cn) |
| 英文摘要 | Ilmenite-type compound ZnMnO3 was synthesized by high temperature and high pressure method. The phase is different from that synthesized at atmospheric pressure, it shows a hexagonal structure with a space group of R-3H (No. 148). Its lattice parameters are a = b = 4.9608(2) angstrom, c = 13.7876(3) angstrom at room temperature. The octahedrons of ZnO6 and MnO6 are stacked layer by layer. The electronic configuration is Zn2+Mn4+O3, where the antiferromagnetic (AFM) interaction between Mn4+ ions induces an AFM transition at 16.2 K. The results of the first principles calculation also indicates ZnMnO3 is a Mn4+ ions dominated AFM insulator with an energy gap of 1.34 eV. (C) 2020 Elsevier B.V. All rights reserved. |
| WOS关键词 | PHASE ; EVOLUTION ; SYSTEM |
| 资助项目 | National Natural Science Foundation of China (NSFC)[11904197] ; National Natural Science Foundation of China (NSFC)[11804188] ; Natural Science Foundation of Shandong Province, China[ZR2019QF010] ; Natural Science Foundation of Shandong Province, China[ZR2018PA010] ; Project of Introduction and Cultivation for Young Innovative Talents in Colleges and Universities of Shandong Province |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000588303900024 |
| 出版者 | ELSEVIER |
| 资助机构 | National Natural Science Foundation of China (NSFC) ; Natural Science Foundation of Shandong Province, China ; Project of Introduction and Cultivation for Young Innovative Talents in Colleges and Universities of Shandong Province |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/105111]  |
| 专题 | 中国科学院合肥物质科学研究院 |
| 通讯作者 | Zhang, Shoubao |
| 作者单位 | 1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China 2.Qufu Normal Univ, Sch Phys & Phys Engn, Qufu 273165, Shandong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ni, Meiyan,Zhang, Shoubao,Han, Shuo,et al. High pressure synthesis of antiferromagnetic semiconductor of ZnMnO3[J]. PHYSICS LETTERS A,2020,384. |
| APA | Ni, Meiyan.,Zhang, Shoubao.,Han, Shuo.,Liu, Xiaoli.,Zhu, Xuebin.,...&Zhao, Hongyan.(2020).High pressure synthesis of antiferromagnetic semiconductor of ZnMnO3.PHYSICS LETTERS A,384. |
| MLA | Ni, Meiyan,et al."High pressure synthesis of antiferromagnetic semiconductor of ZnMnO3".PHYSICS LETTERS A 384(2020). |
入库方式： OAI收割
来源：合肥物质科学研究院
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