Photoinduced Broad-band Tunable Terahertz Absorber Based on a VO2 Thin Film
文献类型：期刊论文
| 作者 | Ren, Zhuang1,4; Cheng, Long1,4; Hu, Ling7 ; Liu, Caixing1,4; Jiang, Chengxin2; Yang, Shige1,4; Ma, Zongwei3,4; Zhou, Chun3,4; Wang, Haomin5; Zhu, Xuebin7
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| 刊名 | ACS APPLIED MATERIALS & INTERFACES
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| 出版日期 | 2020-10-28 |
| 卷号 | 12 |
| 关键词 | terahertz vanadium dioxide photoinduced tunable absorber antireflection pi-phase shift active multifunctional modulation |
| ISSN号 | 1944-8244 |
| DOI | 10.1021/acsami.0c15297 |
| 通讯作者 | Sheng, Zhigao(zhigaosheng@hmfl.ac.cn) |
| 英文摘要 | The demand for terahertz (THz) communication and detection fuels continuous research for high performance of THz absorption materials. In addition to varying the materials and their structure passively, an alternative approach is to modulate a THz wave actively by tuning an external stimulus. Correlated oxides are ideal materials for this because the effects of a small external control parameter can be amplified by inner electronic correlations. Here, by utilizing an unpatterned strongly correlated electron oxide VO2 thin film, a photoinduced broad-band tunable THz absorber is realized first. The absorption, transmission, reflection, and phase of THz waves can all be actively controlled by an external pump laser above room temperature. By varying the laser fluence, the average broad-band absorption can be tuned from 18.9 to 74.7% and the average transmission can be tuned from 9.2 to 69.2%. Meanwhile, a broad-band antireflection is obtained at 5.6 mJ/cm(2), and a pi-phase shift of a reflected THz wave is achieved when the fluence increases greater than 5.7 mJ/cm(2). Apart from other modulators, the photoexcitation-assisted dual-phase competition is identified as the origin of this active THz multifunctional modulation. Our work suggests that advantages of controllable phase separation in strongly correlated electron systems could provide viable routes in the creation of active optical components for THz waves. |
| WOS关键词 | PHASE-TRANSITION ; MEMORY DEVICE ; MODULATION ; ABSORPTION ; SPECTROSCOPY ; FABRICATION ; DESIGN ; DRIVEN |
| 资助项目 | National Key R&D Program of China[2017YFA0303603] ; National Key R&D Program of China[2016YFA0401803] ; National Key R&D Program of China[2017YFF0206106] ; National Natural Science Foundation of China (NSFC)[U2032218] ; National Natural Science Foundation of China (NSFC)[11574316] ; National Natural Science Foundation of China (NSFC)[U1532155] ; National Natural Science Foundation of China (NSFC)[51772317] ; National Natural Science Foundation of China (NSFC)[91964102] ; Key Research Program of Frontier Sciences, CAS[QYZDB-SSW-SLH011] ; President Foundation of Hefei Institutes of Physical Science, CAS[YZJJ2018QN16] ; CAS Pioneer Hundred Talents Program ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB30000000] ; High Magnetic Field Laboratory of Anhui Province |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:000586868400058 |
| 出版者 | AMER CHEMICAL SOC |
| 资助机构 | National Key R&D Program of China ; National Natural Science Foundation of China (NSFC) ; Key Research Program of Frontier Sciences, CAS ; President Foundation of Hefei Institutes of Physical Science, CAS ; CAS Pioneer Hundred Talents Program ; Strategic Priority Research Program of the Chinese Academy of Sciences ; High Magnetic Field Laboratory of Anhui Province |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/105481]  |
| 专题 | 中国科学院合肥物质科学研究院 |
| 通讯作者 | Sheng, Zhigao |
| 作者单位 | 1.Univ Sci & Technol China, Hefei 230026, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 3.Chinese Acad Sci, Key Lab Photovolta & Energy Conservat Mat, Hefei 230031, Peoples R China 4.Chinese Acad Sci, High Field Magnet Lab, Anhui Key Lab Condensed Matter Phys Extreme Condi, Hefei 230031, Peoples R China 5.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China 6.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China 7.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ren, Zhuang,Cheng, Long,Hu, Ling,et al. Photoinduced Broad-band Tunable Terahertz Absorber Based on a VO2 Thin Film[J]. ACS APPLIED MATERIALS & INTERFACES,2020,12. |
| APA | Ren, Zhuang.,Cheng, Long.,Hu, Ling.,Liu, Caixing.,Jiang, Chengxin.,...&Sheng, Zhigao.(2020).Photoinduced Broad-band Tunable Terahertz Absorber Based on a VO2 Thin Film.ACS APPLIED MATERIALS & INTERFACES,12. |
| MLA | Ren, Zhuang,et al."Photoinduced Broad-band Tunable Terahertz Absorber Based on a VO2 Thin Film".ACS APPLIED MATERIALS & INTERFACES 12(2020). |
入库方式： OAI收割
来源：合肥物质科学研究院
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