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Pressure-induced enhancement of optoelectronic properties in PtS2

文献类型：期刊论文

作者Yuan, Yi-Fang2,3,4; Zhang, Zhi-Tao4; Wang, Wei-Ke5; Zhou, Yong-Hui4; Chen, Xu-Liang4; An, Chao4; Zhang, Ran-Ran4; Zhou, Ying4; Gu, Chuan-Chuan4; Li, Liang6
刊名CHINESE PHYSICS B
出版日期2018-06-01
卷号27期号:6页码:5
关键词high pressure optoelectronic properties transition metal disulfide
ISSN号1674-1056
DOI10.1088/1674-1056/27/6/066201
其他题名Pressure-induced enhancement of optoelectronic properties in pts2
通讯作者Li, Xin-Jian(lixj@zzu.edu.cn) ; Yang, Zhao-Rong(zryang@issp.ac.cn)
英文摘要PtS2, which is one of the group-10 transition metal dichalcogenides, attracts increasing attention due to its extraordinary properties under external modulations as predicted by theory, such as tunable bandgap and indirect-to-direct gap transition under strain; however, these properties have not been verified experimentally. Here we report the first experimental exploration of its optoelectronic properties under external pressure. We find that the photocurrent is weakly pressure-dependent below 3 GPa but increases significantly in the pressure range of 3 GPa-4 GPa, with a maximum similar to 6 times higher than that at ambient pressure. X-ray diffraction data shows that no structural phase transition can be observed up to 26.8 GPa, which indicates a stable lattice structure of PtS2 under high pressure. This is further supported by our Raman measurements with an observation of linear blue-shifts of the two Raman-active modes to 6.4 GPa. The pressure-enhanced photocurrent is related to the indirect-to-direct/quasi- direct bandgap transition under pressure, resembling the gap behavior under compression strain as predicted theoretically.
WOS关键词TRANSITION-METAL DICHALCOGENIDES ; MOLYBDENUM-DISULFIDE ; MOS2 ; AMORPHIZATION ; METALLIZATION ; PEROVSKITE ; MONOLAYER ; CHEMISTRY ; BANDGAP
资助项目DOE-NNSA[DE-NA0001974] ; DOE-BES[DE-FG02-99ER45775] ; NSF ; DOE Office of Science[DE-AC02-06CH11357]
WOS研究方向Physics
语种英语
CSCD记录号CSCD:6265255
WOS记录号WOS:000435920800001
出版者IOP PUBLISHING LTD
资助机构DOE-NNSA ; DOE-NNSA ; DOE-NNSA ; DOE-NNSA ; DOE-NNSA ; DOE-NNSA ; DOE-NNSA ; DOE-NNSA ; DOE-NNSA ; DOE-NNSA ; DOE-NNSA ; DOE-NNSA ; DOE-NNSA ; DOE-NNSA ; DOE-NNSA ; DOE-NNSA ; DOE-BES ; DOE-BES ; DOE-BES ; DOE-BES ; DOE-BES ; DOE-BES ; DOE-BES ; DOE-BES ; DOE-BES ; DOE-BES ; DOE-BES ; DOE-BES ; DOE-BES ; DOE-BES ; DOE-BES ; DOE-BES ; NSF ; NSF ; NSF ; NSF ; NSF ; NSF ; NSF ; NSF ; NSF ; NSF ; NSF ; NSF ; NSF ; NSF ; NSF ; NSF ; DOE Office of Science ; DOE Office of Science ; DOE Office of Science ; DOE Office of Science ; DOE Office of Science ; DOE Office of Science ; DOE Office of Science ; DOE Office of Science ; DOE Office of Science ; DOE Office of Science ; DOE Office of Science ; DOE Office of Science ; DOE Office of Science ; DOE Office of Science ; DOE Office of Science ; DOE Office of Science ; DOE-NNSA ; DOE-NNSA ; DOE-NNSA ; DOE-NNSA ; DOE-NNSA ; DOE-NNSA ; DOE-NNSA ; DOE-NNSA ; DOE-NNSA ; DOE-NNSA ; DOE-NNSA ; DOE-NNSA ; DOE-NNSA ; DOE-NNSA ; DOE-NNSA ; DOE-NNSA ; DOE-BES ; DOE-BES ; DOE-BES ; DOE-BES ; DOE-BES ; DOE-BES ; DOE-BES ; DOE-BES ; DOE-BES ; DOE-BES ; DOE-BES ; DOE-BES ; DOE-BES ; DOE-BES ; DOE-BES ; DOE-BES ; NSF ; NSF ; NSF ; NSF ; NSF ; NSF ; NSF ; NSF ; NSF ; NSF ; NSF ; NSF ; NSF ; NSF ; NSF ; NSF ; DOE Office of Science ; DOE Office of Science ; DOE Office of Science ; DOE Office of Science ; DOE Office of Science ; DOE Office of Science ; DOE Office of Science ; DOE Office of Science ; DOE Office of Science ; DOE Office of Science ; DOE Office of Science ; DOE Office of Science ; DOE Office of Science ; DOE Office of Science ; DOE Office of Science ; DOE Office of Science
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/37302]  
专题合肥物质科学研究院_中科院强磁场科学中心
通讯作者Li, Xin-Jian; Yang, Zhao-Rong
作者单位1.Anhui Univ, Inst Phys Sci & Informat Technol, Hefei 230601, Anhui, Peoples R China
2.Zhengzhou Univ, Dept Phys, Zhengzhou 450052, Henan, Peoples R China
3.Zhengzhou Univ, Lab Mat Phys, Zhengzhou 450052, Henan, Peoples R China
4.Chinese Acad Sci, High Magnet Field Lab, Anhui Prov Key Lab Condensed Matter Phys Extreme, Hefei 230031, Anhui, Peoples R China
5.Hunan Normal Univ, Synerget Innovat Ctr Quantum Effects & Applicat, Key Lab Low Dimens Quantum Struct & Quantum Contr, Minist Educ,Coll Phys & Informat Sci, Changsha 410081, Hunan, Peoples R China
6.HUST, State Key Lab Mat Proc & Die & Mould Technol, Sch Mat Sci & Engn, Wuhan 430074, Hubei, Peoples R China
推荐引用方式
GB/T 7714		 Yuan, Yi-Fang,Zhang, Zhi-Tao,Wang, Wei-Ke,et al. Pressure-induced enhancement of optoelectronic properties in PtS2[J]. CHINESE PHYSICS B,2018,27(6):5.
APA Yuan, Yi-Fang.,Zhang, Zhi-Tao.,Wang, Wei-Ke.,Zhou, Yong-Hui.,Chen, Xu-Liang.,...&Yang, Zhao-Rong.(2018).Pressure-induced enhancement of optoelectronic properties in PtS2.CHINESE PHYSICS B,27(6),5.
MLA Yuan, Yi-Fang,et al."Pressure-induced enhancement of optoelectronic properties in PtS2".CHINESE PHYSICS B 27.6(2018):5.

入库方式： OAI收割

来源：合肥物质科学研究院

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