Solution-processed amorphous Ga2O3:CdO TFT-type deep-UV photodetectors
文献类型：期刊论文
| 作者 | Xiao, Xi; Liang, Lingyan; Pei, Yu; Yu, Jiahuan; Duan, Hongxiao; Chang, Ting-Chang; Cao, Hongtao |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2020 |
| 卷号 | 116期号:19 |
| 关键词 | THIN-FILM TRANSISTORS GALLIUM OXIDE BETA-GA2O3 PERFORMANCE |
| DOI | 10.1063/5.0007617 |
| 英文摘要 | Amorphous Ga2O3:CdO thin films and their thin-film transistor (TFT) photodetectors were fabricated via a simple and low-cost spin-coating method. The film optical bandgap and TFT electrical parameters can be effectively regulated via changing the Cd content. The optimized Ga2O3:CdO TFT photodetector exhibited a responsivity of 2.17A/W and a high UV/vis. rejection of 1.88x10(4) under 260nm at small working biases, which are comparable or even superior to the recently reported results. Systematic comparison between metal-semiconductor-metal- and TFT-type photodetectors further confirmed that our TFT photodetectors had superior detective performance and lower electrical power consumption. |
| 学科主题 | Physics |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/19646]  |
| 专题 | 2020专题 2020专题_期刊论文 |
| 作者单位 | 1.Liang, LY 2.Cao, HT (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Div Funct Mat & Nano Devices, Ningbo 315201, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Xiao, Xi,Liang, Lingyan,Pei, Yu,et al. Solution-processed amorphous Ga2O3:CdO TFT-type deep-UV photodetectors[J]. APPLIED PHYSICS LETTERS,2020,116(19). |
| APA | Xiao, Xi.,Liang, Lingyan.,Pei, Yu.,Yu, Jiahuan.,Duan, Hongxiao.,...&Cao, Hongtao.(2020).Solution-processed amorphous Ga2O3:CdO TFT-type deep-UV photodetectors.APPLIED PHYSICS LETTERS,116(19). |
| MLA | Xiao, Xi,et al."Solution-processed amorphous Ga2O3:CdO TFT-type deep-UV photodetectors".APPLIED PHYSICS LETTERS 116.19(2020). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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