中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Demonstration of ohmic contact using MoOx/Al on p-GaN and the proposal of a reflective electrode for AlGaN-based DUV-LEDs

文献类型:期刊论文

作者Li, Liang; Cui, Mei; Shao, Hua; Dai, Yijun; Chen, Li; Zhang, Zi-Hui; Hoo, Jason; Guo, Sniping; Lan, Wen'an; Cao, Lili
刊名OPTICS LETTERS
出版日期2020
卷号45期号:8页码:2427-2430
关键词DEEP-UV LEDS REALIZATION RESISTANCE GROWTH LAYER
DOI10.1364/OL.387275
英文摘要The MoOx/Al electrode was designed and fabricated on p-GaN and sapphire with good ohmic behavior and decent deep ultraviolet (DUV) reflectivity, respectively. The influences of MoOx thickness and annealing condition on the electrical and optical behaviors of the MoOx/Al structure were investigated. Surface morphology of MoOx with different thicknesses reveals a 3D growth mode. Partial decomposition of MoOx was discovered, which helps in the formation of ohmic contact between MoOx and Al. The potential for application in deep ultraviolet light-emitting-diodes (DUV-LEDs) has also been demonstrated. (C) 2020 Optical Society of America
学科主题Optics
源URL[http://ir.nimte.ac.cn/handle/174433/19791]  
专题2020专题
2020专题_期刊论文
作者单位1.Guo, W (corresponding author), Univ Chinese Acad Sci, Beijing 100049, Peoples R China.
2.Guo, W (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China.
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GB/T 7714
Li, Liang,Cui, Mei,Shao, Hua,et al. Demonstration of ohmic contact using MoOx/Al on p-GaN and the proposal of a reflective electrode for AlGaN-based DUV-LEDs[J]. OPTICS LETTERS,2020,45(8):2427-2430.
APA Li, Liang.,Cui, Mei.,Shao, Hua.,Dai, Yijun.,Chen, Li.,...&Ye, Jichun.(2020).Demonstration of ohmic contact using MoOx/Al on p-GaN and the proposal of a reflective electrode for AlGaN-based DUV-LEDs.OPTICS LETTERS,45(8),2427-2430.
MLA Li, Liang,et al."Demonstration of ohmic contact using MoOx/Al on p-GaN and the proposal of a reflective electrode for AlGaN-based DUV-LEDs".OPTICS LETTERS 45.8(2020):2427-2430.

入库方式: OAI收割

来源:宁波材料技术与工程研究所

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