Electronic stopping power for slow ions in the low-hardness semimetal HgTe using first-principles calculations
文献类型：期刊论文
| 作者 | Fu, Yan-Long; Zhang, Zhao-Jun; Li, Chang-Kai; Sang, Hai-Bo; Cheng, Wei; Zhang, Feng-Shou |
| 刊名 | JOURNAL OF PHYSICS-CONDENSED MATTER
 |
| 出版日期 | 2020 |
| 卷号 | 32期号:10 |
| 关键词 | CAPTURE GAS DYNAMICS |
| DOI | 10.1088/1361-648X/ab598c |
| 英文摘要 | The electronic stopping power for low-velocity ions (including protons, alpha-particles, and C4+) is investigated in a novel semimetal HgTe system, where the data are obtained with the aid of Ehrenfest dynamics combined with time-dependent density functional theory. For the light projectile ions (protons and alpha-particles), the linear and nonlinear behaviors of electronic stopping power in three different channel directions are analyzed in detail. In the case where the projectile ion is a proton, the linear results for the threshold velocity are correlated with an indirect band gap; the direction of the electronic stopping power depends on the radial drag force, the channeling electronic density and the trapped charge. More notably, we report an interesting channel-geometry fact, i.e. that the electronic stopping power of HgTe is powerfully modulated by the impact parameters. The parallel off-center tracks increase the electronic stopping power, making it more consistent with the SRIM data. In the case of an alpha-particle as the projectile ion, nonlinear behavior that varies with velocity can be ascribed to the charge transfer, which is another mode of energy dissipation. In addition, when the slightly heavier projectile C4+ travels through the medium HgTe, the projectile C4+ can capture more free charges than the protons and alpha-particlesunder the same circumstances. Especially, for the projectile in the off-channel, the electronic stopping power is close to the SRIM data with the decrease of the impact parameter. These results extend the study of radiation damage to a new field of materials. |
| 学科主题 | Physics |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/19888]  |
| 专题 | 2020专题 2020专题_期刊论文 |
| 作者单位 | 1.Zhang, FS (corresponding author), Beijing Radiat Ctr, Beijing 100875, Peoples R China. 2.Zhang, FS (corresponding author), Beijing Normal Univ, Coll Nucl Sci & Technol, Key Lab Beam Technol & Mat Modificat, Minist Educ, Beijing 100875, Peoples R China. 3.Cheng, W 4.Cheng, W (corresponding author), Chinese Acad Sci, Ningbo Inst Ind Technol, Ningbo 315201, Zhejiang, Peoples R China. 5.Zhang, FS (corresponding author), Ctr Theoret Nucl Phys, Natl Lab Heavy Ion Accelerator Lanzhou, Lanzhou 730000, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Fu, Yan-Long,Zhang, Zhao-Jun,Li, Chang-Kai,et al. Electronic stopping power for slow ions in the low-hardness semimetal HgTe using first-principles calculations[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,2020,32(10). |
| APA | Fu, Yan-Long,Zhang, Zhao-Jun,Li, Chang-Kai,Sang, Hai-Bo,Cheng, Wei,&Zhang, Feng-Shou.(2020).Electronic stopping power for slow ions in the low-hardness semimetal HgTe using first-principles calculations.JOURNAL OF PHYSICS-CONDENSED MATTER,32(10). |
| MLA | Fu, Yan-Long,et al."Electronic stopping power for slow ions in the low-hardness semimetal HgTe using first-principles calculations".JOURNAL OF PHYSICS-CONDENSED MATTER 32.10(2020). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。