Four distinct resistive states in van der Waals full magnetic 1T-VSe2/CrI3/1T-VSe2 tunnel junction
文献类型：期刊论文
| 作者 | Li, Fangfang; Yang, Baishun; Zhu, Yu; Han, Xiufeng; Yan, Yu |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2020 |
| 卷号 | 505 |
| 关键词 | FERROMAGNETISM |
| DOI | 10.1016/j.apsusc.2019.144648 |
| 英文摘要 | Two-dimensional (2D) intrinsic magnets have been successfully utilized to make the multifunctional van der Waals (vdW) spintronic devices. In this work, we design a vdW magnetic tunnel junction (vdW MTJ) formed by a ferromagnetic (FM) monolayer CrI3 barrier sandwiched between two 2D FM 1T-VSe2 electrodes and investigate the magnetic anisotropy and the tunneling magnetoresistance (TMR) effect of this vdW MTJ by using first-principles calculations. It is found that different from the conventional MTJs, four different magnetic configurations can be achieved in the vdW MTJ based on 1T-VSe2/CrI3/1T-VSe2 heterostructure when the magnetic moments of top electrode are pinned to be [0 0 1] axis. Moreover, the conductance of vdW MTJ based on 1T-VSe2/CrI3/1T-VSe2 heterostructure is the highest (lowest) when the magnetic moments of barrier and bottom electrode are all along [0 0 1] ([001]) axis, and a highest TMR ratio of 178% can be obtained in this vdW MTJ. The large changes of tunneling conductance with different magnetic configurations originate mainly from the large variation of the effective majority- and minority-spin transmission channels of FM 1T-VSe2 for different magnetic configurations. Our results suggest that vdW MTJ based on 1T-VSe2/CrI3/1T-VSe2 heterostructure holds great potential in multi-states magnetic storage for spintronics. |
| 学科主题 | Chemistry ; Materials Science ; Physics |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/19924]  |
| 专题 | 2020专题 2020专题_期刊论文 |
| 作者单位 | Yan, Y (corresponding author), Jilin Univ, Key Lab Phys & Technol Adv Batteries, Minist Educ, Dept Phys, Changchun 130012, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Li, Fangfang,Yang, Baishun,Zhu, Yu,et al. Four distinct resistive states in van der Waals full magnetic 1T-VSe2/CrI3/1T-VSe2 tunnel junction[J]. APPLIED SURFACE SCIENCE,2020,505. |
| APA | Li, Fangfang,Yang, Baishun,Zhu, Yu,Han, Xiufeng,&Yan, Yu.(2020).Four distinct resistive states in van der Waals full magnetic 1T-VSe2/CrI3/1T-VSe2 tunnel junction.APPLIED SURFACE SCIENCE,505. |
| MLA | Li, Fangfang,et al."Four distinct resistive states in van der Waals full magnetic 1T-VSe2/CrI3/1T-VSe2 tunnel junction".APPLIED SURFACE SCIENCE 505(2020). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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