Passivating Surface Defects of n-SnO2 Electron Transporting Layer by InP/ZnS Quantum Dots: Toward Efficient and Stable Organic Solar Cells
文献类型：期刊论文
| 作者 | Peng, Ruixiang; Yan, Tingting; Chen, Junwei; Yang, Shangfeng; Ge, Ziyi; Wang, Mingtai |
| 刊名 | ADVANCED ELECTRONIC MATERIALS
 |
| 出版日期 | 2020 |
| 卷号 | 6期号:3 |
| 关键词 | PERFORMANCE NANOCRYSTALS RECOMBINATION ACCEPTORS |
| DOI | 10.1002/aelm.201901245 |
| 英文摘要 | N-type tin oxide (n-SnO2) nanoparticle film has shown great potential as an electron transport layer (ETL) in fabricating highly efficient organic solar cells (OSCs) due to its low-temperature preparation and high electrical conductivity. However, surface defects on the n-SnO2 nanoparticles generated by the solution-processed approach seriously limit the performance of the OSCs with n-SnO2 ETL. InP/ZnS quantum dots (QDs) are employed to passivate the surface defects of n-SnO2 ETL, and an inverted OSC using PM6:Y6 as active layer achieves a power conversion efficiency (PCE) of 15.22%, much higher than that of a device based on pure n-SnO2 ETL (13.86%). The synergistic enhancement of the device open-circuit voltage (V-oc) and fill factor (FF) is attributed to the improved morphologies of PM6:Y6 layer on the QDs/ETL, increased charge extraction and collection efficiency, and decreased monomolecular recombination caused by the defect-trapped charge carriers in the solar cell. Moreover, the inverted device with n-SnO2/InP/ZnS QDs ETL show a much higher stability than that of the conventional PEDOT:PSS based one. This work presents a promising QDs passivation strategy on n-SnO2 ETL to develop efficient and stable OSCs. |
| 学科主题 | Science & Technology - Other Topics ; Materials Science ; Physics |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/20112]  |
| 专题 | 2020专题 2020专题_期刊论文 |
| 作者单位 | 1.Ge, ZY (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China. 2.Wang, MT (corresponding author), Chinese Acad Sci, Hefei Inst Phys Sci, Inst Appl Technol, Hefei 230031, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Peng, Ruixiang,Yan, Tingting,Chen, Junwei,et al. Passivating Surface Defects of n-SnO2 Electron Transporting Layer by InP/ZnS Quantum Dots: Toward Efficient and Stable Organic Solar Cells[J]. ADVANCED ELECTRONIC MATERIALS,2020,6(3). |
| APA | Peng, Ruixiang,Yan, Tingting,Chen, Junwei,Yang, Shangfeng,Ge, Ziyi,&Wang, Mingtai.(2020).Passivating Surface Defects of n-SnO2 Electron Transporting Layer by InP/ZnS Quantum Dots: Toward Efficient and Stable Organic Solar Cells.ADVANCED ELECTRONIC MATERIALS,6(3). |
| MLA | Peng, Ruixiang,et al."Passivating Surface Defects of n-SnO2 Electron Transporting Layer by InP/ZnS Quantum Dots: Toward Efficient and Stable Organic Solar Cells".ADVANCED ELECTRONIC MATERIALS 6.3(2020). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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