Broadband Optoelectronic Synaptic Thin-Film Transistors Based on Oxide Semiconductors
文献类型：期刊论文
| 作者 | Duan, Hongxiao; Javaid, Kashif; Liang, Lingyan; Huang, Lu; Yu, Jiahuan; Zhang, Hongliang; Gao, Junhua; Zhuge, Fei; Chang, Ting-Chang; Cao, Hongtao |
| 刊名 | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
 |
| 出版日期 | 2020 |
| 卷号 | 14期号:4 |
| 关键词 | PLASTICITY DEVICES BUDGET |
| DOI | 10.1002/pssr.201900630 |
| 英文摘要 | Optoelectronic synapse, well coupling the optical and electrical signals in one device, is an important building block in neuromorphic hardware library. Herein, optoelectronic synaptic devices are demonstrated based on a unique amorphous oxide semiconductor (InGaCdO [IGCO]) that can be spiked by broadband light signals from ultraviolet to near-infrared region, approaching the wavelength of 1000 nm. These optically stimulated synaptic devices are based on the conventional bottom-gate thin-film transistor (TFT) configuration, providing the beneficial process/structural compatibility with the flat-panel display industry. The IGCO TFTs, showing an ultrahigh field-effect mobility up to 106 cm(2) V-1 s(-1), can well simulate a series of basic synaptic functionalities via changing the pulse intensity, number, and frequency. The device plasticity originates from the dynamic ionization and neutralization of oxygen vacancy-related defects. Also, the mechanism underlying this dynamic process is discussed in detail, verifying that oxygen vacancy can turn to its ionized state by directly absorbing a photon having enough energy or with the aid of holes. The relatively higher carrier mobility, smaller bandgap, and larger activation energy of oxygen vacancy for the IGCO together facilitate the achievement of broadband optoelectronic synaptic devices. |
| 学科主题 | Materials Science ; Physics |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/20207]  |
| 专题 | 2020专题 2020专题_期刊论文 |
| 作者单位 | 1.Liang, LY 2.Cao, HT (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Div Funct Mat & Nano Devices, Ningbo 315201, Peoples R China. 3.Cao, HT (corresponding author), Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Duan, Hongxiao,Javaid, Kashif,Liang, Lingyan,et al. Broadband Optoelectronic Synaptic Thin-Film Transistors Based on Oxide Semiconductors[J]. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS,2020,14(4). |
| APA | Duan, Hongxiao.,Javaid, Kashif.,Liang, Lingyan.,Huang, Lu.,Yu, Jiahuan.,...&Cao, Hongtao.(2020).Broadband Optoelectronic Synaptic Thin-Film Transistors Based on Oxide Semiconductors.PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS,14(4). |
| MLA | Duan, Hongxiao,et al."Broadband Optoelectronic Synaptic Thin-Film Transistors Based on Oxide Semiconductors".PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 14.4(2020). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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