Short Communication: An Updated Design to Implement Artificial Neuron Synaptic Behaviors in One Device with a Control Gate
文献类型:期刊论文
作者 | Qi, Shaocheng; Hu, Yongbin; Dai, Chaoqi; Chen, Peiqin; Wu, Zhendong; Webster, Thomas J.; Dai, Mingzhi |
刊名 | INTERNATIONAL JOURNAL OF NANOMEDICINE |
出版日期 | 2020 |
卷号 | 15页码:6239-6245 |
关键词 | THIN-FILM TRANSISTORS CIRCUITS LOGIC |
DOI | 10.2147/IJN.S223651 |
英文摘要 | Background: As a key component in artificial intelligence computing, a transistor design is updated here as a potential alternative candidate for artificial synaptic behavior implementation. However, further updates are needed to better control artificial synaptic behavior. Here, an updated channel-electrode transistor design is proposed as an artificial synapse device; this structure is different from previously published designs by other groups. Methods: A semiconductor characterization system was used in order to simulate the artificial synaptic behavior and a scanning electron microscope was used to characterize the device structure. Results: It was found that the electrode added to the transistor channel had a strong impact on the representative transmission behavior of such artificial synaptic devices, such as excitatory postsynaptic current (EPSC) and the paired-pulse facilitation (PPF) index. Conclusion: These behaviors were tuned effectively and the impact of the channel electrode is explained by the combined effects of the joint channel electrode and conventional gate. The voltage dependence of such oxide devices suggests more capability to emulate various synaptic behaviors for numerous medical and non-medical applications. This is extremely helpful for future neuromorphic computational system implementation. |
学科主题 | Science & Technology - Other Topics ; Pharmacology & Pharmacy |
源URL | [http://ir.nimte.ac.cn/handle/174433/20248] |
专题 | 2020专题 2020专题_期刊论文 |
作者单位 | 1.Webster, TJ (corresponding author), Northeastern Univ, Dept Chem Engn, Boston, MA 02115 USA. 2.Dai, MZ (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China. |
推荐引用方式 GB/T 7714 | Qi, Shaocheng,Hu, Yongbin,Dai, Chaoqi,et al. Short Communication: An Updated Design to Implement Artificial Neuron Synaptic Behaviors in One Device with a Control Gate[J]. INTERNATIONAL JOURNAL OF NANOMEDICINE,2020,15:6239-6245. |
APA | Qi, Shaocheng.,Hu, Yongbin.,Dai, Chaoqi.,Chen, Peiqin.,Wu, Zhendong.,...&Dai, Mingzhi.(2020).Short Communication: An Updated Design to Implement Artificial Neuron Synaptic Behaviors in One Device with a Control Gate.INTERNATIONAL JOURNAL OF NANOMEDICINE,15,6239-6245. |
MLA | Qi, Shaocheng,et al."Short Communication: An Updated Design to Implement Artificial Neuron Synaptic Behaviors in One Device with a Control Gate".INTERNATIONAL JOURNAL OF NANOMEDICINE 15(2020):6239-6245. |
入库方式: OAI收割
来源:宁波材料技术与工程研究所
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