Magnetism modulation and conductance quantization in a gadolinium oxide memristor
文献类型：期刊论文
| 作者 | Xie, Zhuolin; Gao, Shuang; Ye, Xiaoyu; Yang, Huali; Gong, Guodong; Lu, Ying; Ye, Junya; Liu, Gang; Li, Run-Wei |
| 刊名 | PHYSICAL CHEMISTRY CHEMICAL PHYSICS
 |
| 出版日期 | 2020 |
| 卷号 | 22期号:45页码:26322-26329 |
| 关键词 | MEMORIES DEVICE |
| DOI | 10.1039/d0cp03767b |
| 英文摘要 | The requests for higher information storage density, greater data processing power, and memory-centric computing capability in the current big data era are motivating global research interests in novel solid-state electronic devices that can unite the electron charge and spin degrees of freedom. Herein, the simultaneous realization of magnetism modulation and conductance quantization in a single gadolinium oxide memristor is reported. A remarkable enhancement of >170% in saturation magnetization at room temperature, accompanied by the emergence of a clear magnetoresistance behavior at low temperature, was obtained after setting the memristor from the initial high resistance state (HRS) into the low resistance state (LRS). By carefully resetting the memristor from the LRS into the HRS, up to 32 quantized conductance states with good repeatability and stability were observed, which could possibly allow achieving 5 bit storage in a single memory cell in the future. Moreover, the resistive switching mechanism of the memristor was thoroughly investigated with the help of temperature-dependent resistance tests and high-resolution transmission electron microscopy examination. This work could provide a powerful approach to design future multi-field modulated, high-performance information devices with integrated data storage, sensing, as well as processing functions. |
| 学科主题 | Chemistry ; Physics |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/20302]  |
| 专题 | 2020专题 2020专题_期刊论文 |
| 作者单位 | 1.Li, RW (corresponding author), Chinese Acad Sci, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China. 2.Gao, S 3.Li, RW (corresponding author), Chinese Acad Sci, CAS Key Lab Magnet Mat & Devices, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Xie, Zhuolin,Gao, Shuang,Ye, Xiaoyu,et al. Magnetism modulation and conductance quantization in a gadolinium oxide memristor[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2020,22(45):26322-26329. |
| APA | Xie, Zhuolin.,Gao, Shuang.,Ye, Xiaoyu.,Yang, Huali.,Gong, Guodong.,...&Li, Run-Wei.(2020).Magnetism modulation and conductance quantization in a gadolinium oxide memristor.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,22(45),26322-26329. |
| MLA | Xie, Zhuolin,et al."Magnetism modulation and conductance quantization in a gadolinium oxide memristor".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 22.45(2020):26322-26329. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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