Modeling and Mechanism of Enhanced Performance of In-Ga-Zn-O Thin-Film Transistors with Nanometer Thicknesses under Temperature Stress
文献类型：期刊论文
| 作者 | Dai, Chaoqi; Qi, Guoqiang; Qiao, Hai; Wang, Weiliang; Xiao, Han; Hu, Yongbin; Guo, Liqiang; Dai, Mingzhi; Wang, Pengjun; Webster, Thomas J. |
| 刊名 | JOURNAL OF PHYSICAL CHEMISTRY C
 |
| 出版日期 | 2020 |
| 卷号 | 124期号:41页码:22793-22798 |
| 关键词 | HYSTERESIS EXTRACTION |
| DOI | 10.1021/acs.jpcc.0c05911 |
| 英文摘要 | In-Ga-Zn-O (IGZO) nanometer thin-film transistors (TFTs) are promising candidates for liquid crystal display (LCD) drivers and human body sensors. It is critically important to study the temperature dependence of IGZO TFTs on electrical properties. However, the mechanism of the enhanced IGZO TFT function at different temperatures has not been fully determined. Her; a single transistor was used to act as a temperature sensor to save the space, and transfer curves shifting positively were found for the first time, different from conventional temperature-dependent behaviors. This behavior suggests at least two mechanisms that dominate and are responsible for the different shifts. According to the Arrhenius law, the formula between temperature (T) and threshold voltage (V-TH) was modified. Besides, two different values of activation energy (E-d) on different temperature ranges indicate that there are two main mechanisms. For further verification, different experimental approaches were conducted to study the temperature effects, including subgap density of states (DOS), X-ray photoelectron spectroscopy (XPS), and simulation experiments. This mechanism, shown here for the first time, might better the understanding of TFTs and, thus, further their applications in medicine and beyond. |
| 学科主题 | Chemistry ; Science & Technology - Other Topics ; Materials Science |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/20403]  |
| 专题 | 2020专题 2020专题_期刊论文 |
| 作者单位 | 1.Dai, MZ (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China. 2.Dai, MZ (corresponding author), Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China. 3.Wang, PJ (corresponding author), Wenzhou Univ, Coll Elect & Elect Engn, Wenzhou 325035, Peoples R China. 4.Webster, TJ (corresponding author), Northeastern Univ, Dept Chem Engn, Boston, MA 02115 USA. |
| 推荐引用方式 GB/T 7714 | Dai, Chaoqi,Qi, Guoqiang,Qiao, Hai,et al. Modeling and Mechanism of Enhanced Performance of In-Ga-Zn-O Thin-Film Transistors with Nanometer Thicknesses under Temperature Stress[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2020,124(41):22793-22798. |
| APA | Dai, Chaoqi.,Qi, Guoqiang.,Qiao, Hai.,Wang, Weiliang.,Xiao, Han.,...&Webster, Thomas J..(2020).Modeling and Mechanism of Enhanced Performance of In-Ga-Zn-O Thin-Film Transistors with Nanometer Thicknesses under Temperature Stress.JOURNAL OF PHYSICAL CHEMISTRY C,124(41),22793-22798. |
| MLA | Dai, Chaoqi,et al."Modeling and Mechanism of Enhanced Performance of In-Ga-Zn-O Thin-Film Transistors with Nanometer Thicknesses under Temperature Stress".JOURNAL OF PHYSICAL CHEMISTRY C 124.41(2020):22793-22798. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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