Emergent Ferroelectricity in Otherwise Nonferroelectric Oxides by Oxygen Vacancy Design at Heterointerfaces
文献类型:期刊论文
作者 | He, Ri; Lin, Jun Liang; Liu, Qing; Liao, Zhaoliang; Shui, Lingling; Wang, Zhan Jie; Zhong, Zhicheng; Li, Run-Wei |
刊名 | ACS APPLIED MATERIALS & INTERFACES
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出版日期 | 2020 |
卷号 | 12期号:40页码:45602-45610 |
关键词 | METAL-INSULATOR-TRANSITION TOTAL-ENERGY CALCULATIONS ELECTRIC-FIELD CONTROL INDUCED POLARIZATION CRITICAL THICKNESS THIN-FILM SRTIO3 SYMMETRY DEFECTS SUPERCONDUCTIVITY |
DOI | 10.1021/acsami.0c13314 |
英文摘要 | Introducing point defects in complex metal oxides is a very effective route to engineer crystal symmetry and therefore control physical properties. However, the inversion symmetry breaking, which is vital for many tantalizing properties, such as ferroelectricity and chiral spin structure, is usually hard to be induced in the bulk crystal by point defects. By designing the oxygen vacancy formation energy profile and migration path across the oxide heterostructure, our first-principles density functional theory (DFT) calculations demonstrate that the point defects can effectively break the inversion symmetry and hence create novel ferroelectricity in superlattices consisting of otherwise nonferroelectric materials SrTiO3 and SrRuO3. This induced ferroelectricity can be significantly enhanced by reducing the SrTiO3 thickness. Inspired by theory calculation, SrTiO3/SrRuO3 superlattices were experimentally fabricated and are found to exhibit surprising strong ferroelectric properties. Our finding paves a simple and effective pathway to engineer the inversion symmetry and thus properties by point defect control in oxide heterostructures. |
学科主题 | Science & Technology - Other Topics ; Materials Science |
源URL | [http://ir.nimte.ac.cn/handle/174433/20432] ![]() |
专题 | 2020专题 2020专题_期刊论文 |
作者单位 | 1.Wang, ZJ (corresponding author), Northeastern Univ, Sch Mat Sci & Engn, Shenyang 110819, Peoples R China. 2.Liao, ZL (corresponding author), Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Peoples R China. 3.Zhong, ZC (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Applicat Technol, Key Lab Magnet Mat Devices & Zhejiang Prov, Ningbo 315201, Peoples R China. 4.Zhong, ZC (corresponding author), Univ Chinese Acad Sci, China Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China. |
推荐引用方式 GB/T 7714 | He, Ri,Lin, Jun Liang,Liu, Qing,et al. Emergent Ferroelectricity in Otherwise Nonferroelectric Oxides by Oxygen Vacancy Design at Heterointerfaces[J]. ACS APPLIED MATERIALS & INTERFACES,2020,12(40):45602-45610. |
APA | He, Ri.,Lin, Jun Liang.,Liu, Qing.,Liao, Zhaoliang.,Shui, Lingling.,...&Li, Run-Wei.(2020).Emergent Ferroelectricity in Otherwise Nonferroelectric Oxides by Oxygen Vacancy Design at Heterointerfaces.ACS APPLIED MATERIALS & INTERFACES,12(40),45602-45610. |
MLA | He, Ri,et al."Emergent Ferroelectricity in Otherwise Nonferroelectric Oxides by Oxygen Vacancy Design at Heterointerfaces".ACS APPLIED MATERIALS & INTERFACES 12.40(2020):45602-45610. |
入库方式: OAI收割
来源:宁波材料技术与工程研究所
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