Improved carrier confinement and stimulated recombination rate in GaN-based vertical-cavity surface-emitting lasers with buried p-AlGaN inversion layer
文献类型：期刊论文
| 作者 | Cui, Mei; Gao, Yuanbin; Hang, Sheng; Qiu, Xuejiao; Zhang, Yonghui; Zhang, Zi-Hui; Guo, Wei; Ye, Jichun |
| 刊名 | SUPERLATTICES AND MICROSTRUCTURES
 |
| 出版日期 | 2020 |
| 卷号 | 146 |
| 关键词 | EFFICIENCY TRANSPORT MECHANISM VCSELS |
| DOI | 10.1016/j.spmi.2020.106654 |
| 英文摘要 | A GaN-based vertical cavity surface emitting laser (VCSEL) featuring a buried ring-shape p-Al0.10Ga0.90N inside n-GaN contact layer for lateral electron confinement is proposed. The p-AlGaN layer inserted in n-GaN forms an n-p-n structure, acting as a potential barrier to prevent vertical electron migration outside the aperture of the VCSEL, where optical gain is accumulated. By adjusting the thickness and position of the p-AlGaN layer, electron concentration and stimulated recombination rate in the aperture of the VCSEL increased significantly. Consequently, the output power of VCSEL with buried p-AlGaN layer increases by 57% compared to the conventional VCSEL at an injection current of 10 mA. The detailed mechanism responsible for this enhancement is further explored. This work suggests that the introduction of the buried p-AlGaN layer in VCSEL can provide new line of thought in achieving effective current confinement in the development of high-efficient, low-threshold solid-state lasers. |
| 学科主题 | Physics |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/20448]  |
| 专题 | 2020专题 2020专题_期刊论文 |
| 作者单位 | 1.Ye, JC (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China. 2.Guo, W 3.Zhang, ZH (corresponding author), Hebei Univ Technol, Sch Elect & Informat Engn, Inst Micronano Photoelectron & Electromagnet Tech, Tianjin 300401, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Cui, Mei,Gao, Yuanbin,Hang, Sheng,et al. Improved carrier confinement and stimulated recombination rate in GaN-based vertical-cavity surface-emitting lasers with buried p-AlGaN inversion layer[J]. SUPERLATTICES AND MICROSTRUCTURES,2020,146. |
| APA | Cui, Mei.,Gao, Yuanbin.,Hang, Sheng.,Qiu, Xuejiao.,Zhang, Yonghui.,...&Ye, Jichun.(2020).Improved carrier confinement and stimulated recombination rate in GaN-based vertical-cavity surface-emitting lasers with buried p-AlGaN inversion layer.SUPERLATTICES AND MICROSTRUCTURES,146. |
| MLA | Cui, Mei,et al."Improved carrier confinement and stimulated recombination rate in GaN-based vertical-cavity surface-emitting lasers with buried p-AlGaN inversion layer".SUPERLATTICES AND MICROSTRUCTURES 146(2020). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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