Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint
文献类型：期刊论文
| 作者 | Dai, Chaoqi; Chen, Peiqin; Qi, Shaocheng; Hu, Yongbin; Song, Zhitang; Dai, Mingzhi |
| 刊名 | NANO RESEARCH
 |
| 出版日期 | 2020 |
| 卷号 | 14期号:1页码:232-238 |
| 关键词 | LOGIC GATES MEMORY FILM REALIZATION |
| DOI | 10.1007/s12274-020-3074-4 |
| 英文摘要 | There is a continuous demand to reduce the size of the devices that form a unit circuit, such as logic gates and memory, to reduce their footprint and increase device integration. In order to achieve a highly efficient circuit architecture, optimizations need to be made in terms of device processing. However, the time involved in the current reduction of device sizes according to Moore's Law has slowed down. Here, we propose a flexible transistor with ultra-thin IGZO (InGaZnO, indium-gallium-zinc-oxide) as the channel material, which not only scales down the footprints of multi-transistor logic gates but also combines the functions of the logic gates, memory, and sensors into a single cell. The transistor proposed here has an ultrathin semiconductor layer and can implement the typical functions of logic gates that conventionally have 2-6 transistors. Furthermore, it demonstrates the memory effect with a programming time as low as 5 ns. This design can also display various artificial synaptic behaviors. This new device design and structure can be adopted for the development of next-generation flexible electronics that require higher integration. |
| 学科主题 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/20470]  |
| 专题 | 2020专题 2020专题_期刊论文 |
| 作者单位 | 1.Song, ZT (corresponding author), Chinese Acad Sci, Shanghai Microsyst & Informat Technol Inst, Shanghai 200433, Peoples R China. 2.Dai, MZ (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China. 3.Song, ZT 4.Dai, MZ (corresponding author), Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Dai, Chaoqi,Chen, Peiqin,Qi, Shaocheng,et al. Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint[J]. NANO RESEARCH,2020,14(1):232-238. |
| APA | Dai, Chaoqi,Chen, Peiqin,Qi, Shaocheng,Hu, Yongbin,Song, Zhitang,&Dai, Mingzhi.(2020).Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint.NANO RESEARCH,14(1),232-238. |
| MLA | Dai, Chaoqi,et al."Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint".NANO RESEARCH 14.1(2020):232-238. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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