Recipe for ultrafast and persistent phase-change memory materials
文献类型：期刊论文
| 作者 | Ding, Keyuan; Chen, Bin; Chen, Yimin; Wang, Junqiang; Shen, Xiang; Rao, Feng |
| 刊名 | NPG ASIA MATERIALS
 |
| 出版日期 | 2020 |
| 卷号 | 12期号:1 |
| 关键词 | CRYSTALLIZATION KINETICS CHANGE NANOPARTICLES GE2SB2TE5 TRANSITION NUCLEATION GETE |
| DOI | 10.1038/s41427-020-00246-z |
| 英文摘要 | The contradictory nature of increasing the crystallization speed while extending the amorphous stability for phase-change materials (PCMs) has long been the bottleneck in pursuing ultrafast yet persistent phase-change random-access memory. Scandium antimony telluride alloy (ScxSb2Te3) represents a feasible route to resolve this issue, as it allows a subnanosecond SET speed but years of reliable retention of the RESET state. To achieve the best device performances, the optimal composition and its underlying working mechanism need to be unraveled. Here, by tuning the doping dose of Sc, we demonstrate that Sc(0.3)Sb(2)Te(3)has the fastest crystallization speed and fairly improved data nonvolatility. The simultaneous improvement in such 'conflicting' features stems from reconciling two dynamics factors. First, promoting heterogeneous nucleation at elevated temperatures requires a higher Sc dose to stabilize more precursors, which also helps suppress atomic diffusion near ambient temperatures to ensure a rather stable amorphous phase. Second, however, enlarging the kinetic contrast through a fragile-to-strong crossover in the supercooled liquid regime should require a moderate Sc content; otherwise, the atomic mobility for crystal growth at elevated temperatures will be considerably suppressed. Our work thus reveals the recipe by tailoring the crystallization kinetics to design superior PCMs for the development of high-performance phase-change working memory technology. |
| 学科主题 | Materials Science |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/20483]  |
| 专题 | 2020专题 2020专题_期刊论文 |
| 作者单位 | Rao, F (corresponding author), Shenzhen Univ, Coll Mat Sci & Engn, Shenzhen 518060, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Ding, Keyuan,Chen, Bin,Chen, Yimin,et al. Recipe for ultrafast and persistent phase-change memory materials[J]. NPG ASIA MATERIALS,2020,12(1). |
| APA | Ding, Keyuan,Chen, Bin,Chen, Yimin,Wang, Junqiang,Shen, Xiang,&Rao, Feng.(2020).Recipe for ultrafast and persistent phase-change memory materials.NPG ASIA MATERIALS,12(1). |
| MLA | Ding, Keyuan,et al."Recipe for ultrafast and persistent phase-change memory materials".NPG ASIA MATERIALS 12.1(2020). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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