Decreasing Resistivity of Silicon Carbide Ceramics by Incorporation of Graphene
文献类型：期刊论文
| 作者 | Cai, Ningning; Guo, Daidong; Wu, Guoping; Xie, Fangmin; Tan, Shouhong; Jiang, Nan; Li, He |
| 刊名 | MATERIALS
 |
| 出版日期 | 2020 |
| 卷号 | 13期号:16 |
| 关键词 | ELECTRICAL-RESISTIVITY MECHANICAL-PROPERTIES SIC CERAMICS COMPOSITE INFILTRATION PERCOLATION CONDUCTION |
| DOI | 10.3390/ma13163586 |
| 英文摘要 | Silicon carbide (SiC) ceramic is an ideal material for mechanical seal because of its super hardness, high strength, low friction coefficient, good thermal conductivity, and resistance to friction and wear. However, due to relatively high resistivity of SiC ceramic, the triboelectric charge caused by rubbing of mechanical seal end-faces could not be released. It is terrible that the accumulation of triboelectric charge could cause electrochemical corrosion, which would accelerate wear. To decrease the resistivity of SiC ceramic is a desire for improving the performance of mechanical seal. In this research, decreasing resistivity of pressureless sintered SiC ceramic was investigated by conductive pathways through semiconductive grains in a body by incorporation of graphene, which has an extremely low resistivity. With the increasing of graphene from 0 to 2 wt.%, the volume resistivity of SiC ceramics sintered with graphene decreased logarithmically from >10(6)to around 200 omega center dot cm, and the bulk density decreased gradually, from 3.132 to 3.039 g/cm(3). In order to meet the requirements of mechanical seal, SiC ceramic sintered with 1 wt.% of graphene, for which the volume resistivity is of 397 omega center dot cm, the bulk density is of 3.076 g/cm(3), and the flexural strength is of 364 MPa, was optimized when all properties were taken into consideration. It is possible to fabricate low-resistivity SiC ceramic as a useful friction pair material for mechanical seal in a special condition, without excessive loss of their excellent mechanical properties by the introduction of partially connected graphene as conductive pathway into semiconducting ceramic. |
| 学科主题 | Materials Science |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/20607]  |
| 专题 | 2020专题 2020专题_期刊论文 |
| 作者单位 | 1.Jiang, N (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Marine New Mat & Related Technol, Zhejiang Key Lab Marine Mat & Protect Technol, Ningbo 315201, Peoples R China. 2.Tan, SH (corresponding author), Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China. 3.Tan, SH (corresponding author), Ningbo FLK Technol CO LTD, Ningbo 315104, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Cai, Ningning,Guo, Daidong,Wu, Guoping,et al. Decreasing Resistivity of Silicon Carbide Ceramics by Incorporation of Graphene[J]. MATERIALS,2020,13(16). |
| APA | Cai, Ningning.,Guo, Daidong.,Wu, Guoping.,Xie, Fangmin.,Tan, Shouhong.,...&Li, He.(2020).Decreasing Resistivity of Silicon Carbide Ceramics by Incorporation of Graphene.MATERIALS,13(16). |
| MLA | Cai, Ningning,et al."Decreasing Resistivity of Silicon Carbide Ceramics by Incorporation of Graphene".MATERIALS 13.16(2020). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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