Edge effect in silicon solar cells with dopant-free interdigitated back-contacts
文献类型：期刊论文
| 作者 | Lin, Hao; Wang, Jiajia; Wang, Zilei; Xu, Zhiyuan; Gao, Pingqi; Shen, Wenzhong |
| 刊名 | NANO ENERGY
 |
| 出版日期 | 2020 |
| 卷号 | 74 |
| 关键词 | ELECTRON-SELECTIVE CONTACTS RECOMBINATION SUPERPOSITION PRINCIPLE |
| DOI | 10.1016/j.nanoen.2020.104893 |
| 英文摘要 | Dopant-free heterojunction opens new doors to highly efficient silicon solar cells with interdigitated back-contacts (IBC) via an easy hard-mask processing. However, the existence of inevitable overlap between the hole- and electron-transport layers may cause edge leakage and recombination, which will deteriorate the power conversion efficiency. Here we unambiguously determined the edge recombination and recombination losses quantitatively, in combination with detailed comparisons in photovoltaic parameters, dark and light current-voltage (I-V) curves, partially illuminated I-V curves, of the hard-mask processed and the lithography processed IBC devices. Without the interfacial passivation layer, the solar cells fabricated by the hard-mask method suffer severe edge recombination with loss of 3 x 10(-4) A and a quite poor fill factor (FF) of similar to 66%, suggesting that the edge recombination could be another important issue affecting the FF besides the series resistance. With the clear understanding of the edge effect, we finely control the edge overlap, and finally obtained silicon dopant-free solar cells (with of intrinsic amorphous silicon as passivation layer) with over 20% efficiency and 73% FF either by lithography or by hard-mask methods. |
| 学科主题 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/20615]  |
| 专题 | 2020专题 2020专题_期刊论文 |
| 作者单位 | 1.Gao, PQ (corresponding author), Sun Yat Sen Univ, Sch Mat, Guangzhou 510275, Peoples R China. 2.Shen, WZ (corresponding author), Shanghai Jiao Tong Univ, Key Lab Artificial Struct & Quantum Control, Sch Phys & Astron, Inst Solar Energy,Minist Educ, 800 Dong Chuan Rd, Shanghai 200240, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Lin, Hao,Wang, Jiajia,Wang, Zilei,et al. Edge effect in silicon solar cells with dopant-free interdigitated back-contacts[J]. NANO ENERGY,2020,74. |
| APA | Lin, Hao,Wang, Jiajia,Wang, Zilei,Xu, Zhiyuan,Gao, Pingqi,&Shen, Wenzhong.(2020).Edge effect in silicon solar cells with dopant-free interdigitated back-contacts.NANO ENERGY,74. |
| MLA | Lin, Hao,et al."Edge effect in silicon solar cells with dopant-free interdigitated back-contacts".NANO ENERGY 74(2020). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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