Polar Rectification Effect in Electro-Fatigued SrTiO3-Based Junctions
文献类型：期刊论文
| 作者 | Xu, Xueli; Zhang, Hui; Zhong, Zhicheng; Zhang, Ranran; Yin, Lihua; Sun, Yuping; Huang, Haoliang; Lu, Yalin; Lu, Yi; Zhou, Chun |
| 刊名 | ACS APPLIED MATERIALS & INTERFACES
 |
| 出版日期 | 2020 |
| 卷号 | 12期号:28页码:31645-31651 |
| 关键词 | 2ND-HARMONIC GENERATION HARMONIC-GENERATION OXIDE |
| DOI | 10.1021/acsami.0c08418 |
| 英文摘要 | Rectifying semiconductor junctions are crucial to electronic devices. They convert alternating current into a direct one by allowing unidirectional charge flows. Analogous to the current-flow rectification for itinerary electrons, here, a polar rectification that is based on the localized oxygen vacancies (OVs) in a Ti/fatigued-SrTiO3 (fSTO) Schottky junction is first demonstrated. The fSTO with OVs is produced by an electrodegradation process. The different movabilities of localized OVs and itinerary electrons in the fSTO yield a unidirectional electric polarization at the interface of the junction under the coaction of external and built-in electric fields. Moreover, the fSTO displays a pre-ferroelectric state located between paraelectric and ferroelectric phases. The pre-ferroelectric state has three sub-states and can be easily driven into a ferroelectric state by an external electric field. These observations open up opportunities for potential polar devices and may underpin many useful polar-triggered electronic phenomena. |
| 学科主题 | Science & Technology - Other Topics ; Materials Science |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/20651]  |
| 专题 | 2020专题 2020专题_期刊论文 |
| 作者单位 | 1.Sun, JR (corresponding author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China. 2.Sheng, ZG (corresponding author), Chinese Acad Sci, Inst Appl Techol, Key Lab Photovolta & Energy Conservat Mat, Hefei 230031, Peoples R China. 3.Zhong, ZC (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo 315201, Peoples R China. 4.Sheng, ZG (corresponding author), Chinese Acad Sci, Anhui Prov Key Lab Condensed Matter Phys Extreme, High Magnet Field Lab, Hefei 230031, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Xu, Xueli,Zhang, Hui,Zhong, Zhicheng,et al. Polar Rectification Effect in Electro-Fatigued SrTiO3-Based Junctions[J]. ACS APPLIED MATERIALS & INTERFACES,2020,12(28):31645-31651. |
| APA | Xu, Xueli.,Zhang, Hui.,Zhong, Zhicheng.,Zhang, Ranran.,Yin, Lihua.,...&Sheng, Zhigao.(2020).Polar Rectification Effect in Electro-Fatigued SrTiO3-Based Junctions.ACS APPLIED MATERIALS & INTERFACES,12(28),31645-31651. |
| MLA | Xu, Xueli,et al."Polar Rectification Effect in Electro-Fatigued SrTiO3-Based Junctions".ACS APPLIED MATERIALS & INTERFACES 12.28(2020):31645-31651. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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