Unprecedented differences in the diamond nucleation density between carbon- and silicon-faces of 4H-silicon carbides
文献类型：期刊论文
| 作者 | Wang, Bo; Sukkaew, Pitsiri; Song, Guichen; Rosenkranz, Andreas; Lu, Yunxiang; Nishimura, Kazhihito; Wang, Jia; Lyu, Jilei; Cao, Yang; Yi, Jian |
| 刊名 | CHINESE CHEMICAL LETTERS
 |
| 出版日期 | 2020 |
| 卷号 | 31期号:7页码:2013-2018 |
| 关键词 | MOLECULAR CALCULATIONS GROWTH-MECHANISM AB-INITIO NANOCRYSTALLINE THERMOCHEMISTRY ADSORPTION HYDROGEN ATOMS |
| DOI | 10.1016/j.cclet.2019.11.026 |
| 英文摘要 | 4H-silicon carbides deposited by diamond films have wide applications in many fields such as semiconductor heterojunction, heat sink and mechanical sealing. Nucleation plays a critical role in the deposition of the diamond film on 4H-silicon carbides. Nevertheless, as a typical polar material, the fundamental mechanism of diamond nucleation on different faces of 4H-silicon carbides has not been fully understood yet. In this contribution, nucleation of diamond was performed on the carbon- and silicon-faces of 4H-silicon carbides in a direct current chemical vapor deposition device. The nucleation density on the carbon-face is higher by 2-3 orders of magnitude compared to the silicon-face. Transmission electron microscopy verifies that there are high density diamond nuclei on the interface between the carbon-face and the diamond film, which is different from columnar diamond growth structure on the silicon-face. Transition state theory calculation reveals that the unprecedented distinction of the nucleation density between the carbon-face and the silicon-face is attributed to different desorption rates of the absorbed hydrocarbon radicals. In addition, kinetic model simulations demonstrate that it is more difficult to form CH2(s)-CH2(s) dimers on silicon-faces than carbon-faces, resulting in much lower nucleation densities on silicon-faces. (C) 2019 Chinese Chemical Society and Institute of Materia Medica, Chinese Academy of Medical Sciences. Published by Elsevier B.V. All rights reserved. |
| 学科主题 | Chemistry |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/20678]  |
| 专题 | 2020专题 2020专题_期刊论文 |
| 作者单位 | 1.Wang, B 2.Jiang, N (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Marine New Mat & Related Technol, Zhejiang Key Lab Marine Mat & Protect Technol, Ningbo 315201, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Wang, Bo,Sukkaew, Pitsiri,Song, Guichen,et al. Unprecedented differences in the diamond nucleation density between carbon- and silicon-faces of 4H-silicon carbides[J]. CHINESE CHEMICAL LETTERS,2020,31(7):2013-2018. |
| APA | Wang, Bo.,Sukkaew, Pitsiri.,Song, Guichen.,Rosenkranz, Andreas.,Lu, Yunxiang.,...&Jiang, Nan.(2020).Unprecedented differences in the diamond nucleation density between carbon- and silicon-faces of 4H-silicon carbides.CHINESE CHEMICAL LETTERS,31(7),2013-2018. |
| MLA | Wang, Bo,et al."Unprecedented differences in the diamond nucleation density between carbon- and silicon-faces of 4H-silicon carbides".CHINESE CHEMICAL LETTERS 31.7(2020):2013-2018. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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