Reversing abnormal hole localization in high-Al-content AlGaN quantum well to enhance deep ultraviolet emission by regulating the orbital state coupling
文献类型：期刊论文
| 作者 | Chen, Li; Lin, Wei; Wang, Huiqiong; Li, Jinchai; Kang, Junyong |
| 刊名 | LIGHT-SCIENCE & APPLICATIONS
 |
| 出版日期 | 2020 |
| 卷号 | 9期号:1 |
| 关键词 | TOTAL-ENERGY CALCULATIONS EXCHANGE |
| DOI | 10.1038/s41377-020-00342-3 |
| 英文摘要 | AlGaN has attracted considerable interest for ultraviolet (UV) applications. With the development of UV optoelectronic devices, abnormal carrier confinement behaviour has been observed forc-plane-oriented AlGaN quantum wells (QWs) with high Al content. Because of the dispersive crystal field split-off hole band (CH band) composed ofp(z)orbitals, the abnormal confinement becomes the limiting factor for efficient UV light emission. This observation differs from the widely accepted concept that confinement of carriers at the lowest quantum level is more pronounced than that at higher quantum levels, which has been an established conclusion for conventional continuous potential wells. In particular, orientationalp(z)orbitals are sensitive to the confinement direction in line with the conducting direction, which affects the orbital intercoupling. In this work, models of Al0.75Ga0.25N/AlN QWs constructed with variable lattice orientations were used to investigate the orbital intercoupling among atoms between the well and barrier regions. Orbital engineering of QWs was implemented by changing the orbital state confinement, with the well plane inclined from 0 degrees to 90 degrees at a step of 30 degrees (referred to thecplane). The barrier potential and transition rate at the band edge were enhanced through this orbital engineering. The concept of orbital engineering was also demonstrated through the construction of inclined QW planes on semi- and nonpolar planes implemented in microrods with pyramid-shaped tops. The higher emission intensity from the QWs on the nonpolar plane compared with those on the polar plane was confirmed via localized cathodoluminescence (CL) maps. |
| 学科主题 | Optics |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/20713]  |
| 专题 | 2020专题 2020专题_期刊论文 |
| 作者单位 | 1.Lin, W 2.Kang, JY (corresponding author), Xiamen Univ, Minist Educ, Engn Res Ctr Micronano Optoelect Mat & Devices, Xiamen 361005, Peoples R China. 3.Kang, JY (corresponding author), Xiamen Univ, Fujian Prov Key Lab Semicond Mat & Applicat, Xiamen 361005, Peoples R China. 4.Kang, JY (corresponding author), Xiamen Univ, Collaborat Innovat Ctr Optoelect Semicond & Effic, Xiamen 361005, Peoples R China. 5.Kang, JY (corresponding author), Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Chen, Li,Lin, Wei,Wang, Huiqiong,et al. Reversing abnormal hole localization in high-Al-content AlGaN quantum well to enhance deep ultraviolet emission by regulating the orbital state coupling[J]. LIGHT-SCIENCE & APPLICATIONS,2020,9(1). |
| APA | Chen, Li,Lin, Wei,Wang, Huiqiong,Li, Jinchai,&Kang, Junyong.(2020).Reversing abnormal hole localization in high-Al-content AlGaN quantum well to enhance deep ultraviolet emission by regulating the orbital state coupling.LIGHT-SCIENCE & APPLICATIONS,9(1). |
| MLA | Chen, Li,et al."Reversing abnormal hole localization in high-Al-content AlGaN quantum well to enhance deep ultraviolet emission by regulating the orbital state coupling".LIGHT-SCIENCE & APPLICATIONS 9.1(2020). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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