Comparison of different types of interfacial oxides on hole-selective p(+)-poly-Si passivated contacts for high-efficiency c-Si solar cells
文献类型：期刊论文
| 作者 | Guo, Xueqi; Liao, Mingdun; Rui, Zhe; Yang, Qing; Wang, Zhixue; Shou, Chunhui; Ding, Waner; Luo, Xijia; Cao, Yuhong; Xu, Jiaping |
| 刊名 | SOLAR ENERGY MATERIALS AND SOLAR CELLS
 |
| 出版日期 | 2020 |
| 卷号 | 210 |
| 关键词 | SILICON-OXIDE P-TYPE REAR CONTACTS POLYSILICON LAYER RESISTANCE TRANSPORT JUNCTIONS THICKNESS QUALITY |
| DOI | 10.1016/j.solmat.2020.110487 |
| 英文摘要 | We present a systematic study of highly boron (B)-doped poly-silicon (p(+)-poly-Si) and ultrathin silicon oxide (SiOx) bi-layer structure, also named as p-TOPCon, as the hole-selective passivated contact on n-type c-Si wafer, where the SiOx layer is made with three methods of hot nitric acid oxidation SiOx (NAOS-SiOx), plasma-assisted nitrous-oxide (N2O) gas oxidation (PANO-SiOx), and thermal oxidation (Thermal-SiOx). We demonstrate that the SiOx has a strong influence on the passivation quality. The best result is achieved using the Thermal-SiOx, while the NAOS-SiOx is slightly inferior, but better than the PANO-SiOx. The p(+)-poly-Si/SiOx structures with the three SiOx layers achieve the optimized passivation quality at different annealing temperatures of 820 degrees C for the NAOS-SiOx, 880 degrees C for the PANO-SiOx , and 930 degrees C for the Thermal-SiOx. The other potential factors affecting the passivation quality are also studied. The most important observation is that the optimized p-TOPCon structures with the three SiOx layers have a similar B diffusion profile, which penetrates into the c-Si wafer about 50 nm with B concentration decreasing to similar to 1 x 10(18) cm(-3). However, the overall p(+)-poly-Si/SiOx is still much poorer than n(+) -poly-Si/SiOx in terms the passivation quality. The comparison of the tau(eff) versus carrier injection intensity spectra suggests that the B-O complex is the passivation killer possibly, and the approaches to improve the p-TOPCon are searching the other elements to reduce the B-O defects. In addition, contact resistivity (rho(c)) measurements show that the Thermal-SiOx leads a higher p c than the others, but its value is still low enough for high-efficiency solar cells. |
| 学科主题 | Energy & Fuels ; Materials Science ; Physics |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/20723]  |
| 专题 | 2020专题 2020专题_期刊论文 |
| 作者单位 | 1.Zeng, YH 2.Yan, BJ 3.Ye, JC (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Guo, Xueqi,Liao, Mingdun,Rui, Zhe,et al. Comparison of different types of interfacial oxides on hole-selective p(+)-poly-Si passivated contacts for high-efficiency c-Si solar cells[J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS,2020,210. |
| APA | Guo, Xueqi.,Liao, Mingdun.,Rui, Zhe.,Yang, Qing.,Wang, Zhixue.,...&Ye, Jichun.(2020).Comparison of different types of interfacial oxides on hole-selective p(+)-poly-Si passivated contacts for high-efficiency c-Si solar cells.SOLAR ENERGY MATERIALS AND SOLAR CELLS,210. |
| MLA | Guo, Xueqi,et al."Comparison of different types of interfacial oxides on hole-selective p(+)-poly-Si passivated contacts for high-efficiency c-Si solar cells".SOLAR ENERGY MATERIALS AND SOLAR CELLS 210(2020). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。