Titanium Nitride Electron-Conductive Contact for Silicon Solar Cells By Radio Frequency Sputtering from a TiN Target
文献类型:期刊论文
作者 | Yu, Jing; Phang, Pheng; Samundsett, Christian; Basnet, Rabin; Neupan, Guru P.; Yang, Xi; Macdonald, Daniel H.; Wan, Yimao; Yan, Di; Ye, Jichun |
刊名 | ACS APPLIED MATERIALS & INTERFACES
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出版日期 | 2020 |
卷号 | 12期号:23页码:26177-26183 |
关键词 | SELECTIVE CONTACTS THIN-FILMS THERMAL-STABILITY DOPED ZNO PERFORMANCE EFFICIENT TRANSPARENT LAYER HOLE |
DOI | 10.1021/acsami.0c04439 |
英文摘要 | Efficient and stable electron selective materials compatible with commercial production are essential to the fabrication of dopant-free silicon solar cells. In this work, we report an air-stable TiN (titanium nitride) polycrystalline film, deposited using radio frequency sputtering process, as an electron selective contact in silicon solar cells. TiN films deposited at 300 W and 1.5 mTorr exhibit a low contact resistivity of 2.0 m Omega.cm(2). Furthermore, the main factors and mechanisms affecting the carrier selectivity properties are also explored. TiN layers as full area rear electron contacts in n-type silicon solar cells have been successfully implemented, even though TiN film contains some oxygen. This process yields a 17% increment in relative efficiency in comparison with reference devices (n-Si/Al contact). Hence, considering the low thermal budget, scalable technique, and low contact resistivity, the TiN layers can pave the way to fabricate high-efficiency selective contact silicon solar cells with a higher degree of reproducibility. |
学科主题 | Science & Technology - Other Topics ; Materials Science |
源URL | [http://ir.nimte.ac.cn/handle/174433/20736] ![]() |
专题 | 2020专题 2020专题_期刊论文 |
作者单位 | 1.Wan, YM 2.Yan, D (corresponding author), Australian Natl Univ, Res Sch Elect Energy & Mat Engn, Canberra, ACT 2601, Australia. 3.Ye, JC (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China. |
推荐引用方式 GB/T 7714 | Yu, Jing,Phang, Pheng,Samundsett, Christian,et al. Titanium Nitride Electron-Conductive Contact for Silicon Solar Cells By Radio Frequency Sputtering from a TiN Target[J]. ACS APPLIED MATERIALS & INTERFACES,2020,12(23):26177-26183. |
APA | Yu, Jing.,Phang, Pheng.,Samundsett, Christian.,Basnet, Rabin.,Neupan, Guru P..,...&Ye, Jichun.(2020).Titanium Nitride Electron-Conductive Contact for Silicon Solar Cells By Radio Frequency Sputtering from a TiN Target.ACS APPLIED MATERIALS & INTERFACES,12(23),26177-26183. |
MLA | Yu, Jing,et al."Titanium Nitride Electron-Conductive Contact for Silicon Solar Cells By Radio Frequency Sputtering from a TiN Target".ACS APPLIED MATERIALS & INTERFACES 12.23(2020):26177-26183. |
入库方式: OAI收割
来源:宁波材料技术与工程研究所
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