Tunable electronic properties and Schottky barrier in a graphene/WSe2 heterostructure under out-of-plane strain and an electric field
文献类型:期刊论文
作者 | Zhang, R; Hao, GQ; Ye, XJ; Gao, SP; Li, HB |
刊名 | PHYSICAL CHEMISTRY CHEMICAL PHYSICS |
出版日期 | 2020-11-07 |
期号 | 41页码:23699 |
ISSN号 | 1463-9076 |
DOI | 10.1039/d0cp04160b |
文献子类 | Article |
英文摘要 | Tuning the electrical transport behavior and reducing the Schottky barrier height of nanoelectronic devices remain a great challenge. To solve this issue, the electronic properties and Schottky barrier of the graphene/WSe2 heterostructure are investigated by the first-principles method under out-of-plane strain and an electric field. Our results show that the WSe2 monolayer and graphene could form a stable van der Waals heterostructure and the intrinsic electronic properties are well preserved. Furthermore, a transformation of a Schottky contact from the n-type to p-type occurs at d = 3.87 angstrom and E = +0.06 V angstrom(-1). In addition, an ohmic contact is formed with E = -0.50, +/- 0.60 V angstrom(-1). Lastly, the effective masses of electrons and holes are calculated to be 0.057m(0) and -0.055m(0) at the equilibrium state, respectively, indicating that the heterostructure has a high carrier mobility. Our research will provide promising approaches for the future design and development of graphene/WSe2 nano-field effect transistors. |
WOS关键词 | TRANSITION-METAL DICHALCOGENIDES ; DER-WAALS HETEROSTRUCTURES ; PHOTOCATALYTIC PERFORMANCE ; MONOLAYER MOS2 ; HETEROJUNCTIONS ; CONTACT ; WSE2 ; WS2 ; PHOTOLUMINESCENCE ; TRANSISTORS |
WOS研究方向 | Chemistry ; Physics |
语种 | 英语 |
出版者 | ROYAL SOC CHEMISTRY |
源URL | [http://ir.sic.ac.cn/handle/331005/27632] |
专题 | 中国科学院上海硅酸盐研究所 |
推荐引用方式 GB/T 7714 | Zhang, R,Hao, GQ,Ye, XJ,et al. Tunable electronic properties and Schottky barrier in a graphene/WSe2 heterostructure under out-of-plane strain and an electric field[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2020(41):23699. |
APA | Zhang, R,Hao, GQ,Ye, XJ,Gao, SP,&Li, HB.(2020).Tunable electronic properties and Schottky barrier in a graphene/WSe2 heterostructure under out-of-plane strain and an electric field.PHYSICAL CHEMISTRY CHEMICAL PHYSICS(41),23699. |
MLA | Zhang, R,et al."Tunable electronic properties and Schottky barrier in a graphene/WSe2 heterostructure under out-of-plane strain and an electric field".PHYSICAL CHEMISTRY CHEMICAL PHYSICS .41(2020):23699. |
入库方式: OAI收割
来源:上海硅酸盐研究所
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