中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Giant tuning of ferroelectricity in single crystals by thickness engineering

文献类型:期刊论文

作者Chen, ZB; Li, F; Huang, QW; Liu, F; Wang, FF; Ringer, SP; Luo, HS; Zhang, SJ; Chen, LQ; Liao, XZ
刊名SCIENCE ADVANCES
出版日期2020-10-01
期号42
ISSN号2375-2548
DOI10.1126/sciadv.abc7156
文献子类Article
英文摘要Thickness effect and mechanical tuning behavior such as strain engineering in thin-film ferroelectrics have been extensively studied and widely used to tailor the ferroelectric properties. However, this is never the case in freestanding single crystals, and conclusions from thin films cannot be duplicated because of the differences in the nature and boundary conditions of the thin-film and freestanding single-crystal ferroelectrics. Here, using in situ biasing transmission electron microscopy, we studied the thickness-dependent domain switching behavior and predicted the trend of ferroelectricity in nanoscale materials induced by surface strain. We discovered that sample thickness plays a critical role in tailoring the domain switching behavior and ferroelectric properties of single-crystal ferroelectrics, arising from the huge surface strain and the resulting surface reconstruction. Our results provide important insights in tuning polarization/domain of single-crystal ferroelectric via sample thickness engineering.
WOS关键词DOMAIN-WALL MOBILITY ; ULTRAHIGH PIEZOELECTRICITY ; FILMS ; DEFECTS ; GROWTH ; STRAIN
WOS研究方向Science & Technology - Other Topics
语种英语
出版者AMER ASSOC ADVANCEMENT SCIENCE
源URL[http://ir.sic.ac.cn/handle/331005/27710]  
专题中国科学院上海硅酸盐研究所
推荐引用方式
GB/T 7714
Chen, ZB,Li, F,Huang, QW,et al. Giant tuning of ferroelectricity in single crystals by thickness engineering[J]. SCIENCE ADVANCES,2020(42).
APA Chen, ZB.,Li, F.,Huang, QW.,Liu, F.,Wang, FF.,...&Liao, XZ.(2020).Giant tuning of ferroelectricity in single crystals by thickness engineering.SCIENCE ADVANCES(42).
MLA Chen, ZB,et al."Giant tuning of ferroelectricity in single crystals by thickness engineering".SCIENCE ADVANCES .42(2020).

入库方式: OAI收割

来源:上海硅酸盐研究所

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