Giant tuning of ferroelectricity in single crystals by thickness engineering
文献类型:期刊论文
作者 | Chen, ZB; Li, F; Huang, QW; Liu, F; Wang, FF; Ringer, SP; Luo, HS; Zhang, SJ; Chen, LQ; Liao, XZ |
刊名 | SCIENCE ADVANCES
![]() |
出版日期 | 2020-10-01 |
期号 | 42 |
ISSN号 | 2375-2548 |
DOI | 10.1126/sciadv.abc7156 |
文献子类 | Article |
英文摘要 | Thickness effect and mechanical tuning behavior such as strain engineering in thin-film ferroelectrics have been extensively studied and widely used to tailor the ferroelectric properties. However, this is never the case in freestanding single crystals, and conclusions from thin films cannot be duplicated because of the differences in the nature and boundary conditions of the thin-film and freestanding single-crystal ferroelectrics. Here, using in situ biasing transmission electron microscopy, we studied the thickness-dependent domain switching behavior and predicted the trend of ferroelectricity in nanoscale materials induced by surface strain. We discovered that sample thickness plays a critical role in tailoring the domain switching behavior and ferroelectric properties of single-crystal ferroelectrics, arising from the huge surface strain and the resulting surface reconstruction. Our results provide important insights in tuning polarization/domain of single-crystal ferroelectric via sample thickness engineering. |
WOS关键词 | DOMAIN-WALL MOBILITY ; ULTRAHIGH PIEZOELECTRICITY ; FILMS ; DEFECTS ; GROWTH ; STRAIN |
WOS研究方向 | Science & Technology - Other Topics |
语种 | 英语 |
出版者 | AMER ASSOC ADVANCEMENT SCIENCE |
源URL | [http://ir.sic.ac.cn/handle/331005/27710] ![]() |
专题 | 中国科学院上海硅酸盐研究所 |
推荐引用方式 GB/T 7714 | Chen, ZB,Li, F,Huang, QW,et al. Giant tuning of ferroelectricity in single crystals by thickness engineering[J]. SCIENCE ADVANCES,2020(42). |
APA | Chen, ZB.,Li, F.,Huang, QW.,Liu, F.,Wang, FF.,...&Liao, XZ.(2020).Giant tuning of ferroelectricity in single crystals by thickness engineering.SCIENCE ADVANCES(42). |
MLA | Chen, ZB,et al."Giant tuning of ferroelectricity in single crystals by thickness engineering".SCIENCE ADVANCES .42(2020). |
入库方式: OAI收割
来源:上海硅酸盐研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。