Observation of above-room-temperature ferromagnetism in chemically stable layered semiconductor RhI3
文献类型：期刊论文
| 作者 | Che, XL; Zhang, Z; Wang, D; Zhao, W; Wang, T; Zhao, P; Mu, G; Huang, J; Huang, FQ |
| 刊名 | 2D MATERIALS
 |
| 出版日期 | 2020-10-01 |
| 期号 | 4 |
| ISSN号 | 2053-1583 |
| DOI | 10.1088/2053-1583/abb3ba |
| 文献子类 | Article |
| 英文摘要 | Two-dimensional (2D) ferromagnetic semiconductors with a room-temperature Curie temperature (T-c) are required for next-generation spintronic devices, but the current candidates suffer from a lowT(c)and poor chemical stability. Here, a new layered compound RhI(3)is discovered to be an above-room-temperature ferromagnetic semiconductor. This compound crystallizes in a monoclinic crystal system of space groupC2/m, with the unit cell ofa= 6.773(8) angstrom,b= 11.721(2) angstrom,c= 6.811(8) angstrom and beta= 108.18(4) degrees. The structure consists of honeycomb rhodium layers separated by iodine-iodine van der Waals gap. Chemically stable RhI(3)possesses an optical bandgap of 1.17 eV. Its robust ferromagnetism with aT(c)of above 400 K, which is far higher than 61 K for the well-known CrI(3)and the highest among the bulk 2D ferromagnetic semiconductors. The robust intrinsic ferromagnetic response is attributed to the Rh(2+)and exchange interactions between I-pand Rh-delectrons induced by iodine vacancies. This work reveals that RhI(3)is a prime candidate for spintronic devices above room temperature and provides a strategy to obtain high temperature 2D ferromagnetic semiconductors by introducing vacancies. |
| WOS关键词 | MAGNETISM |
| WOS研究方向 | Materials Science |
| 语种 | 英语 |
| 出版者 | IOP PUBLISHING LTD |
| 源URL | [http://ir.sic.ac.cn/handle/331005/27714]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 推荐引用方式 GB/T 7714 | Che, XL,Zhang, Z,Wang, D,et al. Observation of above-room-temperature ferromagnetism in chemically stable layered semiconductor RhI3[J]. 2D MATERIALS,2020(4). |
| APA | Che, XL.,Zhang, Z.,Wang, D.,Zhao, W.,Wang, T.,...&Huang, FQ.(2020).Observation of above-room-temperature ferromagnetism in chemically stable layered semiconductor RhI3.2D MATERIALS(4). |
| MLA | Che, XL,et al."Observation of above-room-temperature ferromagnetism in chemically stable layered semiconductor RhI3".2D MATERIALS .4(2020). |
入库方式： OAI收割
来源：上海硅酸盐研究所
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