中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Enhancing thermoelectric performance of BiSbSe3 through improving carrier mobility via percolating carrier transports

文献类型:期刊论文

作者Wang, SN; Xiao, Y; Ren, DD; Su, LZ; Qiu, YT; Zhao, LD
刊名JOURNAL OF ALLOYS AND COMPOUNDS
出版日期2020-09-25
ISSN号0925-8388
DOI10.1016/j.jallcom.2020.155473
文献子类Article
英文摘要BiSbSe3 is a promising medium-temperature thermoelectric material on account of its intrinsically low thermal conductivity. To further enhance the thermoelectric performance in n-type BiSbSe3, we conduct Br doping at Se sites to optimize its carrier concentration and electrical conductivity, finally a maximum ZT of similar to 0.8 in nanostructured BiSb(Se0.94Br0.06)(3) is obtained at 700 K through mechanical alloying. Based on the optimal BiSb(Se0.94Br0.06)(3) composition, we perform percolation effect with mixed grain sizes in nanoscale and microscale to enhance carrier mobility. It is found that carrier mobility is favorably improved by the addition of microscale grains (similar to 30 mu m) in nanostructured BiSb(Se0.94Br0.06)(3) matrix due to the reduced grain boundaries to carrier scattering, which benefits high electrical conductivity and power factor. Simultaneously, the BiSb(Se0.94Br0.06)(3) matrix with mixed grain sizes still maintains very low thermal conductivity due to its intrinsically strong lattice anharmonicity. Owing to the optimized electrical properties and maintained low thermal conductivity, we obtain a maximum ZT value of similar to 1.0 at 700 K in BiSb(Se0.94Br0.06)(3)-4C matrix with 40% microscale grains. This work provides a feasible method to optimize thermoelectric performance by designing microstructure with percolation effect. (C) 2020 Elsevier B.V. All rights reserved.
WOS关键词ULTRALOW THERMAL-CONDUCTIVITY ; BAND CONVERGENCE ; FIGURE ; MERIT ; GETE
WOS研究方向Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
语种英语
出版者ELSEVIER SCIENCE SA
源URL[http://ir.sic.ac.cn/handle/331005/27737]  
专题中国科学院上海硅酸盐研究所
推荐引用方式
GB/T 7714
Wang, SN,Xiao, Y,Ren, DD,et al. Enhancing thermoelectric performance of BiSbSe3 through improving carrier mobility via percolating carrier transports[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2020.
APA Wang, SN,Xiao, Y,Ren, DD,Su, LZ,Qiu, YT,&Zhao, LD.(2020).Enhancing thermoelectric performance of BiSbSe3 through improving carrier mobility via percolating carrier transports.JOURNAL OF ALLOYS AND COMPOUNDS.
MLA Wang, SN,et al."Enhancing thermoelectric performance of BiSbSe3 through improving carrier mobility via percolating carrier transports".JOURNAL OF ALLOYS AND COMPOUNDS (2020).

入库方式: OAI收割

来源:上海硅酸盐研究所

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