Wafer-scale 4H-silicon carbide-on-insulator (4H-SiCOI) platform for nonlinear integrated optical devices
文献类型：期刊论文
| 作者 | Yi, AL; Zheng, Y; Huang, H; Lin, JJ; Yan, YQ; You, TG; Huang, K; Zhang, SB; Shen, C; Zhou, M |
| 刊名 | OPTICAL MATERIALS
 |
| 出版日期 | 2020-09-05 |
| ISSN号 | 0925-3467 |
| DOI | 10.1016/j.optmat.2020.109990 |
| 文献子类 | Article |
| 英文摘要 | 4H-silicon carbide-on-insulator (4H-SiCOI) serves as a novel and high efficient integration platform for nonlinear optics and quantum photonics. The realization of wafer-scale fabrication of single-crystalline semi-insulating 4H-SiC film on Si (100) substrate using the ion-cutting and layer transferring technique was demonstrated in this work. The thermodynamics of 4H-SiC surface blistering is investigated via observing the blistering phenomenon with a series of implanted fluences and annealing temperatures. Surface tomography and the depth dependent film quality of the 4H-SiC have been extensively studied by employing scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Moreover, X-ray diffraction (XRD) was carried out and the diffraction spectrum reveals a narrow peak with a full width at half maximum (FWHM) of 75.6 arcsec, indicating a good maintenance of the single-crystalline phase for the prepared thin film of 4H-SiC as compared to its bulk counterpart. With the single-crystalline 4H-SiCOI, we have successfully fabricated a micro-ring resonator with a quality factor as high as 6.6 x 10(4). The reported 4H-SiCOI wafer provides a feasible monolithic platform for integrated photonic applications. |
| WOS关键词 | HYDROGEN IMPLANTATION ; SILICON ; EXFOLIATION ; TEMPERATURE ; RESONATORS ; CUT ; SI |
| WOS研究方向 | Materials Science ; Optics |
| 语种 | 英语 |
| 出版者 | ELSEVIER |
| 源URL | [http://ir.sic.ac.cn/handle/331005/27775]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 推荐引用方式 GB/T 7714 | Yi, AL,Zheng, Y,Huang, H,et al. Wafer-scale 4H-silicon carbide-on-insulator (4H-SiCOI) platform for nonlinear integrated optical devices[J]. OPTICAL MATERIALS,2020. |
| APA | Yi, AL.,Zheng, Y.,Huang, H.,Lin, JJ.,Yan, YQ.,...&Ou, X.(2020).Wafer-scale 4H-silicon carbide-on-insulator (4H-SiCOI) platform for nonlinear integrated optical devices.OPTICAL MATERIALS. |
| MLA | Yi, AL,et al."Wafer-scale 4H-silicon carbide-on-insulator (4H-SiCOI) platform for nonlinear integrated optical devices".OPTICAL MATERIALS (2020). |
入库方式： OAI收割
来源：上海硅酸盐研究所
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