Ti-Alloying of BaZrS3 Chalcogenide Perovskite for Photovoltaics
文献类型：期刊论文
| 作者 | Wei, XC; Hui, HL; Perera, S; Sheng, A; Watson, DF; Sun, YY; Jia, QX; Zhang, SB; Zeng, H |
| 刊名 | ACS OMEGA
 |
| 出版日期 | 2020-08-04 |
| 期号 | 30页码:18579 |
| ISSN号 | 2470-1343 |
| DOI | 10.1021/acsomega.0c00740 |
| 文献子类 | Article |
| 英文摘要 | BaZrS3, a prototypical chalcogenide perovskite, has been shown to possess a direct band gap, an exceptionally strong near band edge light absorption, and good carrier transport. Coupled with its great stability, nontoxicity with earth-abundant elements, it is thus a promising candidate for thin film solar cells. However, its reported band gap in the range of 1.7-1.8 eV is larger than the optimal value required to reach the Shockley-Queisser limit of a single-junction solar cell. Here, we report the synthesis of Ba(Zr1-xTix)S-3 perovskite compounds with a reduced band gap. It is found that Ti-alloying is extremely effective in band gap reduction of BaZrS3: a mere 4 atom % alloying decreases the band gap from 1.78 to 1.51 eV, resulting in a theoretical maximum power conversion efficiency of 32%. Higher Ti-alloying concentration is found to destabilize the distorted chalcogenide perovskite phase. |
| WOS关键词 | SOLAR-CELLS ; SULFIDES ; LENGTHS |
| WOS研究方向 | Chemistry |
| 语种 | 英语 |
| 出版者 | AMER CHEMICAL SOC |
| 源URL | [http://ir.sic.ac.cn/handle/331005/27850]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 推荐引用方式 GB/T 7714 | Wei, XC,Hui, HL,Perera, S,et al. Ti-Alloying of BaZrS3 Chalcogenide Perovskite for Photovoltaics[J]. ACS OMEGA,2020(30):18579. |
| APA | Wei, XC.,Hui, HL.,Perera, S.,Sheng, A.,Watson, DF.,...&Zeng, H.(2020).Ti-Alloying of BaZrS3 Chalcogenide Perovskite for Photovoltaics.ACS OMEGA(30),18579. |
| MLA | Wei, XC,et al."Ti-Alloying of BaZrS3 Chalcogenide Perovskite for Photovoltaics".ACS OMEGA .30(2020):18579. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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