中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
High infrared emissivity of SiC-AlN ceramics at room temperature

文献类型:期刊论文

作者Zhu, M; Chen, J; Ran, N; Zheng, JQ; Huang, ZR; Liu, XJ; Chen, ZM
刊名JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
出版日期2020-08-01
期号10页码:3528
ISSN号0955-2219
DOI10.1016/j.jeurceramsoc.2020.04.012
文献子类Article
英文摘要SiC-AlN ceramics were fabricated by pressureless sintering with B4C-C as sintering additives. The effects of AlN contents on infrared emissivity, thermal conductivity and electrical properties of SiC ceramics were investigated. The improvement of total emissivity is slight before 3 wt%AlN, but impressive after 3 wt%AlN. The significant increase of the emissivity for AlN content higher than 3 wt% could be explained via DFT calculation, that the impurity energy level formed by N atom doping into 4H-SiC and the lattice distortion are mainly responsible for it. Besides, the highest total emissivity is 0.775 when the content of AlN is 5 wt%. Additionally, more AlN solid solution results in a decrease in thermal conductivity and an enhancement in electrical resistivity. There is always a compromise among the three properties of SiC-AlN ceramics.
WOS关键词RESISTANCE ; COATINGS ; CARBON
WOS研究方向Materials Science
语种英语
出版者ELSEVIER SCI LTD
源URL[http://ir.sic.ac.cn/handle/331005/27877]  
专题中国科学院上海硅酸盐研究所
推荐引用方式
GB/T 7714
Zhu, M,Chen, J,Ran, N,et al. High infrared emissivity of SiC-AlN ceramics at room temperature[J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY,2020(10):3528.
APA Zhu, M.,Chen, J.,Ran, N.,Zheng, JQ.,Huang, ZR.,...&Chen, ZM.(2020).High infrared emissivity of SiC-AlN ceramics at room temperature.JOURNAL OF THE EUROPEAN CERAMIC SOCIETY(10),3528.
MLA Zhu, M,et al."High infrared emissivity of SiC-AlN ceramics at room temperature".JOURNAL OF THE EUROPEAN CERAMIC SOCIETY .10(2020):3528.

入库方式: OAI收割

来源:上海硅酸盐研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。