Exceptional plasticity in the bulk single-crystalline van der Waals semiconductor InSe
文献类型：期刊论文
| 作者 | Wei, TR; Jin, M; Wang, YC; Chen, HY; Gao, ZQ; Zhao, KP; Qiu, PF; Shan, ZW; Jiang, J; Li, RB |
| 刊名 | SCIENCE
 |
| 出版日期 | 2020-07-31 |
| 期号 | 6503页码:542 |
| ISSN号 | 0036-8075 |
| DOI | 10.1126/science.aba9778 |
| 文献子类 | Article |
| 英文摘要 | Inorganic semiconductors are vital for a number of critical applications but are almost universally brittle. Here, we report the superplastic deformability of indium selenide (InSe). Bulk single-crystalline InSe can be compressed by orders of magnitude and morphed into a Mobius strip or a simple origami at room temperature. The exceptional plasticity of this two-dimensional van der Waals inorganic semiconductor is attributed to the interlayer gliding and cross-layer dislocation slip that are mediated by the long-range In-Se Coulomb interaction across the van der Waals gap and soft intralayer In-Se bonding. We propose a combinatory deformability indicator (Xi) to prescreen candidate bulk semiconductors for use in next-generation deformable or flexible electronics. |
| WOS关键词 | 2-DIMENSIONAL MATERIALS ; BRILLOUIN-SCATTERING ; ELASTIC-CONSTANTS ; GRAPHENE ; COHP ; GAS |
| WOS研究方向 | Science & Technology - Other Topics |
| 语种 | 英语 |
| 出版者 | AMER ASSOC ADVANCEMENT SCIENCE |
| 源URL | [http://ir.sic.ac.cn/handle/331005/27878]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 推荐引用方式 GB/T 7714 | Wei, TR,Jin, M,Wang, YC,et al. Exceptional plasticity in the bulk single-crystalline van der Waals semiconductor InSe[J]. SCIENCE,2020(6503):542. |
| APA | Wei, TR.,Jin, M.,Wang, YC.,Chen, HY.,Gao, ZQ.,...&Shi, X.(2020).Exceptional plasticity in the bulk single-crystalline van der Waals semiconductor InSe.SCIENCE(6503),542. |
| MLA | Wei, TR,et al."Exceptional plasticity in the bulk single-crystalline van der Waals semiconductor InSe".SCIENCE .6503(2020):542. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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