Experimental Optical Properties of Single Nitrogen Vacancy Centers in Silicon Carbide at Room Temperature
文献类型：期刊论文
| 作者 | Wang, JF; Liu, ZH; Yan, FF; Li, Q; Yang, XG; Guo, LP; Zhou, X; Huang, W; Xu, JS; Li, CF |
| 刊名 | ACS PHOTONICS
 |
| 出版日期 | 2020-07-15 |
| 期号 | 7页码:1611 |
| ISSN号 | 2330-4022 |
| DOI | 10.1021/acsphotonics.0c00218 |
| 文献子类 | Article |
| 英文摘要 | Robust single spin color centers in solid state systems with telecom wavelength emission are vital to quantum photonics and quantum networks. The nitrogen vacancy (NV) centers in silicon carbide (SiC) have become promising platforms for those applications. However, little is known about the detailed optical properties of the NV centers. In this paper, we investigate the photophysics of the single NV centers in 4H-SiC. The results demonstrate that the NV centers comprise three energy-level electronic structures. Particularly, for c-axis NV centers, both the excitation and the emission polarization degrees are larger than 90%. Photon purity and photostability of the single NV centers are maintained at an elevated temperature up to 400 K. These experiments constitute an important step toward using the NV centers in SiC with respect to quantum photonics. |
| WOS关键词 | COHERENT CONTROL ; ELECTRON SPINS |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science ; Optics ; Physics |
| 语种 | 英语 |
| 出版者 | AMER CHEMICAL SOC |
| 源URL | [http://ir.sic.ac.cn/handle/331005/27904]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 推荐引用方式 GB/T 7714 | Wang, JF,Liu, ZH,Yan, FF,et al. Experimental Optical Properties of Single Nitrogen Vacancy Centers in Silicon Carbide at Room Temperature[J]. ACS PHOTONICS,2020(7):1611. |
| APA | Wang, JF.,Liu, ZH.,Yan, FF.,Li, Q.,Yang, XG.,...&Guo, GC.(2020).Experimental Optical Properties of Single Nitrogen Vacancy Centers in Silicon Carbide at Room Temperature.ACS PHOTONICS(7),1611. |
| MLA | Wang, JF,et al."Experimental Optical Properties of Single Nitrogen Vacancy Centers in Silicon Carbide at Room Temperature".ACS PHOTONICS .7(2020):1611. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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