Tunable Magnetoresistance and Charge Carrier Density in Cr:In2O3/PbMg1/3Nb2/3O3-PbTiO3 Ferroelectric Field-Effect Devices
文献类型：期刊论文
| 作者 | Xu, M; Chen, TW; Yan, JM; Guo, L; Wang, H; Gao, GY; Luo, HS; Chai, Y; Zheng, RK |
| 刊名 | PHYSICAL REVIEW APPLIED
 |
| 出版日期 | 2020-06-02 |
| 期号 | 6 |
| ISSN号 | 2331-7019 |
| DOI | 10.1103/PhysRevApplied.13.064006 |
| 文献子类 | Article |
| 英文摘要 | We report the epitaxial growth of the Cr-doped In(2-x)CrxO(3) (x = 0.05) (Cr:In2O3) semiconducting thin films on perovskite-type (111)-oriented 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (PMN-PT) ferroelectric single-crystal substrates in the form of ferroelectric field-effect devices that allow us to obtain an in situ tuning of the electron carrier density and magnetoresistance (MR) as well as the resistance in a reversible and nonvolatile manner, thereby stringently disclosing the relationship between the MR and the electron carrier density. Specifically, for the thinnest 25-nm Cr:In2O3 film the polarization switching of the PMN-PT from the positively polarized P(r)( )(+)state to the negatively polarized P-r(-) state results in a large increase in the resistance and MR. Particularly, at T = 10 K, the polarization switching induces reversible and nonvolatile changes in the magnitude and sign of MR, demonstrating strong coupling between the MR and the electron carrier density. Moreover, regardless of the polarization states of PMN-PT, MR for films with different thicknesses can be quite well described by a combination of the two-band model and the semiempirical model proposed by Khosla and Fischer based on which the positive MR (PMR) and negative MR (NMR) could be disentangled into positive component [MR(+)] and negative component [MR(-)], respectively. We find that the polarization-switching-induced large decrease in the PMR and the change in the sign of MR from positive to negative is mainly due to the rapid decrease in the MR(+), demonstrating that the coupling between MR(+) and electron carrier density plays a dominant role in controlling the magnitude and sign of MR. |
| WOS关键词 | EFFECT TRANSISTORS ; FERROMAGNETISM |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| 出版者 | AMER PHYSICAL SOC |
| 源URL | [http://ir.sic.ac.cn/handle/331005/27990]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 推荐引用方式 GB/T 7714 | Xu, M,Chen, TW,Yan, JM,et al. Tunable Magnetoresistance and Charge Carrier Density in Cr:In2O3/PbMg1/3Nb2/3O3-PbTiO3 Ferroelectric Field-Effect Devices[J]. PHYSICAL REVIEW APPLIED,2020(6). |
| APA | Xu, M.,Chen, TW.,Yan, JM.,Guo, L.,Wang, H.,...&Zheng, RK.(2020).Tunable Magnetoresistance and Charge Carrier Density in Cr:In2O3/PbMg1/3Nb2/3O3-PbTiO3 Ferroelectric Field-Effect Devices.PHYSICAL REVIEW APPLIED(6). |
| MLA | Xu, M,et al."Tunable Magnetoresistance and Charge Carrier Density in Cr:In2O3/PbMg1/3Nb2/3O3-PbTiO3 Ferroelectric Field-Effect Devices".PHYSICAL REVIEW APPLIED .6(2020). |
入库方式： OAI收割
来源：上海硅酸盐研究所
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