中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Analyzing the Effects of Aluminum-Doped ZnO and Ag Layers for the Transparent Electrode Vertical PCSS

文献类型:期刊论文

作者Zheng, Z; Huang, W; Han, WW; Shi, EW
刊名IEEE TRANSACTIONS ON ELECTRON DEVICES
出版日期2020-06-01
期号6页码:2414
ISSN号0018-9383
DOI10.1109/TED.2020.2989244
文献子类Article
英文摘要To figure out the effects of aluminum-doped ZnO (AZO) and Ag layers for the transparent electrode vertical (TEV) photoconductive semiconductor switch (PCSS) reported in our previous works, several different structures of high power, new vertical, extrinsic-triggered PCSS were designed and their performances are presented. All the PCSSs were fabricated on the vanadium compensated semi-insulating (VCSI) 4H-SiC substrates. The ON-state performance of all device versions was characterized by a test circuit without load resistor. Among all structures, the version with AZO transparent window, AZO subcontact layer, and silver mirror reflector has been testified to be the most reasonable structure, and shows the best results as well. Its minimum ON-state resistance is 6.11 Omega at the optical power density of 2.62 MW/cm(2). The factor for the best ON-state performance of this structure is attributed to the improvement of utilization efficiency of laser energy, and good contact between the AZO and SiC substrate.
WOS关键词HIGH-POWER ; PHOTOCONDUCTIVE SWITCH ; PERFORMANCE
WOS研究方向Engineering ; Physics
语种英语
出版者IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
源URL[http://ir.sic.ac.cn/handle/331005/28011]  
专题中国科学院上海硅酸盐研究所
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GB/T 7714
Zheng, Z,Huang, W,Han, WW,et al. Analyzing the Effects of Aluminum-Doped ZnO and Ag Layers for the Transparent Electrode Vertical PCSS[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2020(6):2414.
APA Zheng, Z,Huang, W,Han, WW,&Shi, EW.(2020).Analyzing the Effects of Aluminum-Doped ZnO and Ag Layers for the Transparent Electrode Vertical PCSS.IEEE TRANSACTIONS ON ELECTRON DEVICES(6),2414.
MLA Zheng, Z,et al."Analyzing the Effects of Aluminum-Doped ZnO and Ag Layers for the Transparent Electrode Vertical PCSS".IEEE TRANSACTIONS ON ELECTRON DEVICES .6(2020):2414.

入库方式: OAI收割

来源:上海硅酸盐研究所

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