Multistate resistance switching in Bi/PMN-PT(111) heterostructures by electric and magnetic field
文献类型：期刊论文
| 作者 | Xu, ZX; Yan, JM; Xu, M; Wang, H; Guo, L; Gao, GY; Zheng, RK |
| 刊名 | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
 |
| 出版日期 | 2020-02-01 |
| 期号 | 4页码:3585 |
| ISSN号 | 0957-4522 |
| DOI | 10.1007/s10854-020-02908-8 |
| 文献子类 | Article |
| 英文摘要 | Bi thin films were grown on (111)-oriented 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (PMN-PT) single-crystal substrates by pulsed laser deposition. Resistance of Bi/PMN-PT could be modulated by asymmetrical bipolar electric field in a reversible and nonvolatile manner at 300 K. By tuning asymmetrical bipolar electric field, different nonvolatile strain states could be generated in PMN-PT and transferred to Bi thin film, which leads to different nonvolatile resistance states. Furthermore, different resistance states of the Bi films could be achieved under different magnetic field at 300 K. The ferroelastic strain- and magnetic-field-modulated resistive properties in Bi/PMN-PT suggest a promising approach for multistate resistive memories. |
| WOS关键词 | NONVOLATILE ; TRANSITION |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| 语种 | 英语 |
| 出版者 | SPRINGER |
| 源URL | [http://ir.sic.ac.cn/handle/331005/28338]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 推荐引用方式 GB/T 7714 | Xu, ZX,Yan, JM,Xu, M,et al. Multistate resistance switching in Bi/PMN-PT(111) heterostructures by electric and magnetic field[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2020(4):3585. |
| APA | Xu, ZX.,Yan, JM.,Xu, M.,Wang, H.,Guo, L.,...&Zheng, RK.(2020).Multistate resistance switching in Bi/PMN-PT(111) heterostructures by electric and magnetic field.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS(4),3585. |
| MLA | Xu, ZX,et al."Multistate resistance switching in Bi/PMN-PT(111) heterostructures by electric and magnetic field".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS .4(2020):3585. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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