中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Realization of BaZrS3 chalcogenide perovskite thin films for optoelectronics

文献类型:期刊论文

作者Wei, XC; Hui, HL; Zhao, C; Deng, CH; Han, MJ; Yu, ZH; Sheng, A; Roy, P; Chen, AP; Lin, JH
刊名NANO ENERGY
出版日期2020-02-01
ISSN号2211-2855
DOI10.1016/j.nanoen.2019.104317
文献子类Article
英文摘要BaZrS3 is a prototypical chalcogenide perovskite, an emerging class of unconventional semiconductor. Recent results on powder samples reveal that it is a material with a direct band gap of 1.7-1.8 eV, a very strong light-matter interaction, and a high chemical stability. Due to the lack of quality thin films, however, many fundamental properties of chalcogenide perovskites remain unknown, hindering their applications in optoelectronics. Here we report the fabrication of BaZrS3 thin films, by sulfurization of oxide films deposited by pulsed laser deposition. We show that these films are n-type with carrier densities in the range of 10(19)-10(20) cm(-3). Depending on the processing temperature, the Hall mobility ranges from 2.1 to 13.7 cm(2)/Vs. The absorption coefficient is > 10(5) cm(-1) at photon energy >1.97 eV. Temperature dependent conductivity measurements suggest shallow donor levels. By assuring that BaZrS3 is a promising candidate, these results potentially unleash the family of chalcogenide perovskites for optoelectronics such as photodetectors, photovoltaics, and light emitting diodes.
WOS关键词HALIDE PEROVSKITES ; SULFIDES ; LENGTHS ; MULTIFERROICS ; SPECTRA ; SRZRS3 ; LIGHT
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
出版者ELSEVIER
源URL[http://ir.sic.ac.cn/handle/331005/28342]  
专题中国科学院上海硅酸盐研究所
推荐引用方式
GB/T 7714
Wei, XC,Hui, HL,Zhao, C,et al. Realization of BaZrS3 chalcogenide perovskite thin films for optoelectronics[J]. NANO ENERGY,2020.
APA Wei, XC.,Hui, HL.,Zhao, C.,Deng, CH.,Han, MJ.,...&Zeng, H.(2020).Realization of BaZrS3 chalcogenide perovskite thin films for optoelectronics.NANO ENERGY.
MLA Wei, XC,et al."Realization of BaZrS3 chalcogenide perovskite thin films for optoelectronics".NANO ENERGY (2020).

入库方式: OAI收割

来源:上海硅酸盐研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。