Effect of thermal annealing on the defects and electrical properties of semi-insulating 6H-SiC
文献类型：期刊论文
| 作者 | Xu, TX; Liu, XC; Zhuo, SY; Huang, W; Gao, P; Xin, J; Shi, EW |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2020-02-01 |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2019.125399 |
| 文献子类 | Article; Proceedings Paper |
| 英文摘要 | Vanadium-doped 6H-SiC wafers were annealed at 950 degrees C, 1350 degrees C and 1650 degrees C in argon atmosphere for 1 h in order to investigate the thermal annealing effect on the defects and electrical properties. It was experimentally observed that the electrical and crystalline property of vanadium-doped 6H-SiC didn't obviously change after annealing at 950 degrees C and 1350 degrees C. However, the resistivity of vanadium-doped 6H-SiC dropped by 5-6 orders of magnitude after annealing at 1650 degrees C. The glow discharge mass spectrometry (GDMS), electron paramagnetic resonance (EPR), high resolution x-ray diffraction (HRXRD) and resistivity mapping measurements implied that both vanadium dopants and intrinsic defects were responsible for the semi-insulating property of the as-grown single crystal SiC. After annealing at high temperature (>= 1650 degrees C), the doped vanadium in single crystal SiC would partially evaporate and the left vanadium dopants might be not enough to compensate the unintentional donors/acceptors with the disappearance of silicon vacancy defects. |
| WOS关键词 | SPIN-RESONANCE ; POINT-DEFECTS ; HIGH-PURITY ; VANADIUM ; LEVEL |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| 语种 | 英语 |
| 出版者 | ELSEVIER |
| 源URL | [http://ir.sic.ac.cn/handle/331005/28349]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 推荐引用方式 GB/T 7714 | Xu, TX,Liu, XC,Zhuo, SY,et al. Effect of thermal annealing on the defects and electrical properties of semi-insulating 6H-SiC[J]. JOURNAL OF CRYSTAL GROWTH,2020. |
| APA | Xu, TX.,Liu, XC.,Zhuo, SY.,Huang, W.,Gao, P.,...&Shi, EW.(2020).Effect of thermal annealing on the defects and electrical properties of semi-insulating 6H-SiC.JOURNAL OF CRYSTAL GROWTH. |
| MLA | Xu, TX,et al."Effect of thermal annealing on the defects and electrical properties of semi-insulating 6H-SiC".JOURNAL OF CRYSTAL GROWTH (2020). |
入库方式： OAI收割
来源：上海硅酸盐研究所
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