Design principle for a p-type oxide gate layer on AlGaN/GaN toward normally-off HEMTs: Li-doped NiO as a model
文献类型：期刊论文
| 作者 | Li, GJ; Li, XM; Zhao, JL; Yan, FW; Zhu, QX; Gao, XD |
| 刊名 | JOURNAL OF MATERIALS CHEMISTRY C
 |
| 出版日期 | 2020-01-21 |
| 期号 | 3页码:1125 |
| ISSN号 | 2050-7526 |
| DOI | 10.1039/c9tc04467a |
| 文献子类 | Article |
| 英文摘要 | Integration of the p-type oxide gate layer on AlGaN/GaN is a promising approach to explore normally-off high electron mobility transistors (HEMTs). However, the critical reason for the ultralow threshold voltage in intrinsic p-type oxide gated HEMTs remains elusive. Herein, Li-doped NiO thin films with various doping contents were grown on AlGaN/GaN/Si substrates by pulsed laser deposition (PLD) to identify the most important physical properties and design principle of p-type oxide for normally-off HEMTs. With the increasing Li doping content up to 25%, Ni0.75Li0.25O on AlGaN/GaN exhibits excellent epitaxial growth quality with good interfacial state, a wide band gap of 3.65 eV and an ultrahigh hole concentration of 6.81 x 10(19) cm(-3). Nevertheless, the Ni0.75Li0.25O/AlGaN/GaN/Si heterostructure still suffers from a low threshold voltage of merely -2.12 V. By resolving the band alignment at the Ni0.75Li0.25O/AlGaN interface and the depletion mechanism for p-type Ni0.75Li0.25O on 2DEG, the band alignment matching is ascribed to be the most critical issue for intrinsic p-type oxide gated normally-off HEMTs with a low threshold voltage, that is, a relatively small energy level difference value between the conduction band of GaN and the valence band of intrinsic p-type oxide. Based on the results, the design principle of the p-type oxide gate layer on AlGaN/GaN for normally-off HEMTs is proposed, and p-type oxides doped from intrinsic n-type oxides are suspected to be competitive candidates. |
| WOS关键词 | THRESHOLD VOLTAGE SHIFT ; EPITAXIAL-GROWTH ; BAND OFFSETS ; THIN-FILMS ; GAN ; TECHNOLOGY ; SEMICONDUCTORS ; POLARIZATION ; INTERFACE ; MECHANISM |
| WOS研究方向 | Materials Science ; Physics |
| 语种 | 英语 |
| 出版者 | ROYAL SOC CHEMISTRY |
| 源URL | [http://ir.sic.ac.cn/handle/331005/28364]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 推荐引用方式 GB/T 7714 | Li, GJ,Li, XM,Zhao, JL,et al. Design principle for a p-type oxide gate layer on AlGaN/GaN toward normally-off HEMTs: Li-doped NiO as a model[J]. JOURNAL OF MATERIALS CHEMISTRY C,2020(3):1125. |
| APA | Li, GJ,Li, XM,Zhao, JL,Yan, FW,Zhu, QX,&Gao, XD.(2020).Design principle for a p-type oxide gate layer on AlGaN/GaN toward normally-off HEMTs: Li-doped NiO as a model.JOURNAL OF MATERIALS CHEMISTRY C(3),1125. |
| MLA | Li, GJ,et al."Design principle for a p-type oxide gate layer on AlGaN/GaN toward normally-off HEMTs: Li-doped NiO as a model".JOURNAL OF MATERIALS CHEMISTRY C .3(2020):1125. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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