Resistive switching behaviors and mechanisms of HfS2 film memory devices studied by experiments and density functional theory calculations
文献类型：期刊论文
| 作者 | Naifeng Li3; Yue Wang3; Haifeng Sun1; Junjie Hu3; Maoyuan Zheng3; Sihao Ye3; Qi Wang3; Yingtao Li3; Deyan He3; Jiatai Wang4 |
| 刊名 | Applied Physics Letters
 |
| 出版日期 | 2020 |
| 卷号 | 6期号:16页码:063503 |
| 语种 | 英语 |
| 源URL | [http://ir.licp.cn/handle/362003/26877]  |
| 专题 | 兰州化学物理研究所_固体润滑国家重点实验室 |
| 通讯作者 | Jing Qi |
| 作者单位 | 1.Western Theater Army 2.State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemicals Physics, Chinese Academy of Sciences 3.Key Laboratory of Special Function Materials and Structure Design, Ministry of Education, School of Physical Science and Technology, Lanzhou University 4.School of Physics and Electronic Information Engineering, Qinghai Normal University |
| 推荐引用方式 GB/T 7714 | Naifeng Li,Yue Wang,Haifeng Sun,et al. Resistive switching behaviors and mechanisms of HfS2 film memory devices studied by experiments and density functional theory calculations[J]. Applied Physics Letters,2020,6(16):063503. |
| APA | Naifeng Li.,Yue Wang.,Haifeng Sun.,Junjie Hu.,Maoyuan Zheng.,...&Jing Qi.(2020).Resistive switching behaviors and mechanisms of HfS2 film memory devices studied by experiments and density functional theory calculations.Applied Physics Letters,6(16),063503. |
| MLA | Naifeng Li,et al."Resistive switching behaviors and mechanisms of HfS2 film memory devices studied by experiments and density functional theory calculations".Applied Physics Letters 6.16(2020):063503. |
入库方式： OAI收割
来源：兰州化学物理研究所
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