Field-Free Switching of a Spin-Orbit-Torque Device Through Interlayer-Coupling-Induced Domain Walls
文献类型：期刊论文
| 作者 | Zhao, Xiaotian; Ji, Lianze; Liu, Wei; Li, Shangkun; Liu, Long; Song, Yuhang; Li, Yang; Ma, Jun; Sun, Xingdan; Wang, Hanwen |
| 刊名 | PHYSICAL REVIEW APPLIED
 |
| 出版日期 | 2020-04-28 |
| 卷号 | 13期号:4 |
| DOI | 10.1103/PhysRevApplied.13.044074 |
| 英文摘要 | The spin-orbit-torque (SOT) device is a promising candidate for the next-generation magnetic random-access memory; however, the static in-plane field needed to induce deterministic switching is a main obstacle for its application in circuits. In this work, we employ the exchange coupling between the Co/Ni/Co trilayer and Tb/Co multilayers in a device to form the domain wall (DW), by whose current-driven propagation the field-free magnetization switching is achieved. The SOT efficiency of the device is highly dependent on the chirality of the Neel-type DW. Meanwhile, the coexistence of two switching modes results in an asymmetric switching phase diagram. We find the competition between the uniform external field and the Dzyaloshinskii-Moriya interaction induces negative feedback to the pinning effect, resulting in a sharp switching process and straight DW profile. Finally, a synthetic antiferromagnetic device is investigated by experiment and micromagnetic simulation to verify the feasibility of using this proposal as the free layer of a magnetic tunneling junction. |
| WOS记录号 | WOS:000529105700004 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/82929]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Zhao, Xiaotian,Ji, Lianze,Liu, Wei,et al. Field-Free Switching of a Spin-Orbit-Torque Device Through Interlayer-Coupling-Induced Domain Walls[J]. PHYSICAL REVIEW APPLIED,2020,13(4). |
| APA | Zhao, Xiaotian.,Ji, Lianze.,Liu, Wei.,Li, Shangkun.,Liu, Long.,...&Zhang, Zhidong.(2020).Field-Free Switching of a Spin-Orbit-Torque Device Through Interlayer-Coupling-Induced Domain Walls.PHYSICAL REVIEW APPLIED,13(4). |
| MLA | Zhao, Xiaotian,et al."Field-Free Switching of a Spin-Orbit-Torque Device Through Interlayer-Coupling-Induced Domain Walls".PHYSICAL REVIEW APPLIED 13.4(2020). |
入库方式： OAI收割
来源：金属研究所
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