Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors
文献类型：期刊论文
| 作者 | Xia, Xiuxin; Sun, Xingdan; Wang, Hanwen; Li, Xiaoxi |
| 刊名 | CRYSTALS
 |
| 出版日期 | 2020-03-01 |
| 卷号 | 10期号:3 |
| DOI | 10.3390/cryst10030144 |
| 英文摘要 | Recently, gallium telluride (GaTe) has triggered much attention for its unique properties and offers excellent opportunities for nanoelectronics. Yet it is a challenge to bridge the semiconducting few-layered GaTe crystals with metallic electrodes for device applications. Here, we report a method on fabricating electrode contacts to few-layered GaTe field effect transistors (FETs) by controlled micro-alloying. The devices show linear I-V curves and on/off ratio of similar to 104 on HfO2 substrates. Kelvin probe force microscope (KPFM) and energy dispersion spectrum (EDS) are performed to characterize the electrode contacts, suggesting that the lowered Schottky barrier by the diffusion of Pd element into the GaTe conduction channel may play an important role. Our findings provide a strategy for the engineering of electrode contact for future device applications based on 2DLMs. |
| WOS记录号 | WOS:000523512100062 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/83080]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Xia, Xiuxin,Sun, Xingdan,Wang, Hanwen,et al. Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors[J]. CRYSTALS,2020,10(3). |
| APA | Xia, Xiuxin,Sun, Xingdan,Wang, Hanwen,&Li, Xiaoxi.(2020).Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors.CRYSTALS,10(3). |
| MLA | Xia, Xiuxin,et al."Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors".CRYSTALS 10.3(2020). |
入库方式： OAI收割
来源：金属研究所
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