1 meV electron irradiation and post-annealing effects of GaInAsN diluted nitride alloy with 1 eV bandgap energy
文献类型：期刊论文
| 作者 | Sailai, M (Sailai, Momin)[ 1 ]; Lei, QQ (Lei, Qi Qi)[ 1,2 ]; Aierken, A (Aierken, Abuduwayiti)[ 1,3 ]; Heini, M (Heini, Maliya)[ 1,4 ]; Zhao, XF (Zhao, Xiao Fan)[ 1 ]; Hao, RT (Hao, Rui Ting)[ 3 ]; Mo, JH (Mo, Jing Hui)[ 3 ]; Guo, J (Guo, Jie)[ 3 ]; Zhuang, Y (Zhuang, Yu)[ 3 ]; Guo, Q (Guo, Qi)[ 1 ]
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| 刊名 | THIN SOLID FILMS
 |
| 出版日期 | 2020 |
| 卷号 | 709期号:9页码:1-5 |
| ISSN号 | 0040-6090 |
| 关键词 | Gallium indium arsenide nitride alloy Electron irradiation Photoluminescence Thermal annealing Arrhenius plot |
| DOI | 10.1016/j.tsf.2020.138237 |
| 英文摘要 | 1 meV electron irradiation and post thermal annealing effects of GaInAsN bulk material with bandgap energy of 1 eV was studied by low-temperature photoluminescence (PL). The nitrogen proportion of the samples was confirmed by high-resolution X-ray diffraction measurement as 0.26%. The result shows that the PL intensity and high activation energy non-radiative centers of GaInAsN materials degraded seriously due to the irradiation induced large number of defects. The PL enhancement phenomena were observed in all samples after rapid thermal annealing (RTA) at 650 degrees C for five minutes. The irradiation and RTA caused PL peak red-shift and blueshift have been discussed. |
| WOS记录号 | WOS:000564130900010 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/7427]  |
| 专题 | 新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室 固体辐射物理研究室 |
| 作者单位 | 1.Sci & Technol Reliabil Phys & Applicat Technol El, 110 Dongguanzhuang Rd, Guangzhou 510610, Peoples R China 2.Yunnan Normal Univ, Sch Energy & Environm, 768 Juxian Rd, Kunming 650500, Yunnan, Peoples R China 3.Univ Chinese Acad Sci, 19-A Yuquan Rd, Beijing 100049, Peoples R China 4.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Device Special Environm, 40-1 South Beijing Rd, Urumqi 830011, Peoples R China |
| 推荐引用方式 GB/T 7714 | Sailai, M ,Lei, QQ ,Aierken, A ,et al. 1 meV electron irradiation and post-annealing effects of GaInAsN diluted nitride alloy with 1 eV bandgap energy[J]. THIN SOLID FILMS,2020,709(9):1-5. |
| APA | Sailai, M .,Lei, QQ .,Aierken, A .,Heini, M .,Zhao, XF .,...&Guo, Q .(2020).1 meV electron irradiation and post-annealing effects of GaInAsN diluted nitride alloy with 1 eV bandgap energy.THIN SOLID FILMS,709(9),1-5. |
| MLA | Sailai, M ,et al."1 meV electron irradiation and post-annealing effects of GaInAsN diluted nitride alloy with 1 eV bandgap energy".THIN SOLID FILMS 709.9(2020):1-5. |
入库方式： OAI收割
来源：新疆理化技术研究所
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