Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors
文献类型：期刊论文
| 作者 | Zhang, X (Zhang, Xiang)[ 1,2,3 ]; Li, YD (Li, Yudong)[ 1,2 ] ; Wen, L (Wen, Lin)[ 1,2 ]; Feng, J (Feng, Jie)[ 1,2 ]; Zhou, D (Zhou, Dong)[ 1,2 ]; Cai, YL (Cai, Yulong)[ 1,2,3 ]; Liu, BK (Liu, Bingkai)[ 1,2,3 ]; Fu, J (Fu, Jing)[ 1,2,3 ]; Guo, Q (Guo, Qi)[ 1,2 ]
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| 刊名 | JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY
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| 出版日期 | 2020 |
| 卷号 | 57期号:9页码:1015-1021 |
| 关键词 | 14-MeV neutron neutron irradiation radiation damage radiation effect |
| ISSN号 | 0022-3131 |
| DOI | 10.1080/00223131.2020.1751323 |
| 英文摘要 | BackSide-Illuminated (BSI) CMOS Image Sensors (CISs), with developed performance on quantum efficiency and sensitivity, have been applied for aerospace missions and gradually replaced FrontSide-Illuminated (FSI) CISs. Two types of BSI CISs with different epitaxial layer thicknesses were irradiated by 14-MeV neutron up to 3.40 x 10(11) n/cm(2) to analyze the degradation induced by neutron irradiation. Dark current, dark current distribution, full well capacity, and spectral response were tested before and after the neutron irradiation and at different annealing time points with various temperatures. The results were analyzed to characterize the degradation introduced by the unique backside passivation layer, and the converse illuminated direction. The interface states induced by displacement damage effects at the backside passivation layer were considered as a novel origin of dark current which was not involved in FSI CISs. |
| WOS记录号 | WOS:000527186400001 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/7675]  |
| 专题 | 新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室 固体辐射物理研究室 |
| 通讯作者 | Li, YD (Li, Yudong)[ 1,2 ] |
| 作者单位 | 1.Univ Chinese Acad Sci, Beijing, Peoples R China 2.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China 3.Chinese Acad Sci, Key Lab Funct Mat & Devices Special Environm, Urumqi, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, X ,Li, YD ,Wen, L ,et al. Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors[J]. JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY,2020,57(9):1015-1021. |
| APA | Zhang, X .,Li, YD .,Wen, L .,Feng, J .,Zhou, D .,...&Guo, Q .(2020).Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors.JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY,57(9),1015-1021. |
| MLA | Zhang, X ,et al."Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors".JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY 57.9(2020):1015-1021. |
入库方式： OAI收割
来源：新疆理化技术研究所
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