Impact of electrical stress on total ionizing dose effects on graphene nano-disc non-volatile memory devices
文献类型：期刊论文
| 作者 | Xi, K (Xi, K.)[ 1 ]; Bi, JS (Bi, J. S.)[ 1,2 ]; Xu, YN (Xu, Y. N.)[ 1 ]; Li, YD (Li, Y. D.)[ 3 ] ; Zhang, ZG (Zhang, Z. G.)[ 4 ]; Liu, M (Liu, M.)[ 1,2 ]
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| 刊名 | MICROELECTRONICS RELIABILITY
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| 出版日期 | 2020 |
| 卷号 | 114期号:11页码:1-5 |
| ISSN号 | 0026-2714 |
| DOI | 10.1016/j.microrel.2020.113882 |
| 英文摘要 | The impact of electrical stress on the effects of total ionizing dose (TID) on graphene nano-disc non-volatile memory (GND-NVM) devices is investigated by X-ray irradiation with doses ranging from 50 to 1000 krad. The electrical characteristics of the devices are measured at each dose step and are compared to those before Xray exposure. Applying non-zero gate stress during irradiation significantly accelerates the degradation process, and the device fails with an unusable memory window at a TID dose of 500 krad. The electric field in the surrounding oxides plays a key role in the observed degradation. |
| WOS记录号 | WOS:000593889100012 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/7697]  |
| 专题 | 固体辐射物理研究室 |
| 作者单位 | 1.China Elect Prod Reliabil & Environm Testing Res, Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou 510610, Peoples R China 2.Chinese Acad Sci, Xinjiang Tech Inst Phys Chem, Urumqi 830011, Peoples R China 3.Univ Chinese Acad Sci, Sch Microelect, Beijing 100029, Peoples R China 4.Chinese Acad Sci, Inst Microelect, Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xi, K ,Bi, JS ,Xu, YN ,et al. Impact of electrical stress on total ionizing dose effects on graphene nano-disc non-volatile memory devices[J]. MICROELECTRONICS RELIABILITY,2020,114(11):1-5. |
| APA | Xi, K ,Bi, JS ,Xu, YN ,Li, YD ,Zhang, ZG ,&Liu, M .(2020).Impact of electrical stress on total ionizing dose effects on graphene nano-disc non-volatile memory devices.MICROELECTRONICS RELIABILITY,114(11),1-5. |
| MLA | Xi, K ,et al."Impact of electrical stress on total ionizing dose effects on graphene nano-disc non-volatile memory devices".MICROELECTRONICS RELIABILITY 114.11(2020):1-5. |
入库方式： OAI收割
来源：新疆理化技术研究所
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